SCDS228F AUGUST   2006  – December 2015 TS3A4741 , TS3A4742

UNLESS OTHERWISE NOTED, this document contains PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics (3-V Supply)
    6. 6.6 Electrical Characteristics (1.8-V Supply)
    7. 6.7 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Related Links
    2. 12.2 Trademarks
    3. 12.3 Electrostatic Discharge Caution
    4. 12.4 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Mechanical Data (Package|Pins)
Thermal pad, mechanical data (Package|Pins)
Orderable Information

6 Specifications

6.1 Absolute Maximum Ratings(1)

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage reference to GND(2) –0.3 4 V
VNO
VCOM
VIN 		Analog and digital voltage –0.3 VCC + 0.3
INO
ICOM 		On-state switch current VNO, VCOM = 0 to VCC –100 100 mA
ICC
IGND 		Continuous current through VCC or GND ±100
Peak current pulsed at 1 ms, 10% duty cycle COM, VNO, VCOM ±200
TA Operating temperature –40 85 °C
TJ Junction temperature 150
Tstg Storage temperature –65 150
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) Signals on COM or NO exceeding VCC or GND are clamped by internal diodes. Limit forward diode current to maximum current rating.

6.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±4000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN MAX UNIT
VCC Supply voltage reference to ground 1.6 3.6 V
VNO
VCOM 		Analog voltage 0 3.6
VIN Digital Voltage 0 VCC

6.4 Thermal Information

THERMAL METRIC(1) TS3A474x UNIT
DCN/DGK
8 PINS
RθJA Junction-to-ambient thermal resistance 214.8 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 191.0
RθJB Junction-to-board thermal resistance 113.1
ψJT Junction-to-top characterization parameter 52.4
ψJB Junction-to-board characterization parameter 110.2
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics (3-V Supply)(2)(1)

VCC = 2.7 V to 3.6 V, TA = –40 to 85°C, VIH = 1.4 V, VIL = 0.5 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP(3) MAX UNIT
ANALOG SWITCH
VCOM, VNO, VNC Analog signal range 0 V+ V
Ron ON-state resistance VCC = 2.7 V, ICOM  = –100 mA,
VNO, VNC = 1.5 V		 25°C 0.7 0.9 Ω
Full 1.1
ΔRon ON-state resistance match between channels(4) VCC = 2.7 V, ICOM  = –100 mA,
VNO, VNC = 1.5 V		 25°C 0.03 0.05 Ω
Full 0.15
Ron(flat) ON-state resistance flatness(5) VCC = 2.7 V, ICOM  = –100 mA,
VNO, VNC  = 1 V, 1.5 V, 2 V		 25°C 0.23 0.4 Ω
Full 0.5
INO(OFF) NO
OFF leakage current(6) 		VCC = 3.6 V, VCOM  = 0.3 V, 3 V,
VNO = 3 V, 0.3 V		 25°C –2 1 2 nA
Full –18 18
ICOM(OFF) COM
OFF leakage current(6) 		VCC = 3.6 V, VCOM  = 0.3 V, 3 V,
VNO = 3 V, 0.3 V		 25°C –2 1 2 nA
Full –18 18
ICOM(ON) COM
ON leakage current(6) 		VCC = 3.6 V, VCOM  = 0.3 V, 3 V,
VNO = 0.3 V, 3 V, or floating		 25°C –2.5 0.01 2.5 nA
Full –5 5
DYNAMIC
tON Turn-on time VNO, VNC  = 1.5 V, RL = 50 Ω,
CL = 35 pF, See Figure 14 		25°C 5 14 ns
Full 15
tOFF Turn-off time VNO, VNC  = 1.5 V, RL = 50 Ω,
CL = 35 pF, See Figure 14 		25°C 4 9 ns
Full 10
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF,
See Figure 15 		25°C 3 pC
CNO(OFF) NO OFF capacitance f = 1 MHz, See Figure 16 25°C 23 pF
CCOM(OFF) COM OFF capacitance f = 1 MHz, See Figure 16 25°C 20
CCOM(ON) COM ON capacitance f = 1 MHz, See Figure 16 25°C 43
BW Bandwidth RL = 50 Ω, Switch ON 25°C 125 MHz
OISO OFF isolation(7) RL = 50 Ω, CL = 5 pF,
See Figure 17 		f = 10 MHz 25°C –40 dB
f = 1 MHz –62
XTALK Crosstalk RL = 50 Ω, CL = 5 pF,
See Figure 17 		f = 10 MHz 25°C –73 dB
f = 1 MHz –95
THD Total harmonic distortion f = 20 Hz to 20 kHz,
VCOM = 2 VP-P 		RL = 32 Ω 25°C 0.04%
RL = 600 Ω 0.003%
DIGITAL CONTROL INPUTS (IN1, IN2)
VIH Input logic high Full 1.4 V
VIL Input logic low Full 0.5
IIN Input leakage current VI = 0 or VCC 25°C 0.5 1 nA
Full –20 20
SUPPLY
VCC Power-supply range 2.7 3.6 V
ICC Positive-supply current VCC = 3.6 V, VIN = 0 or VCC 25°C 0.075 μA
Full 0.75
(1) Parts are tested at 85°C and specified by design and correlation over the full temperature range.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.
(3) Typical values are at VCC = 3 V, TA = 25°C.
(4) ΔRon = Ron(max) – Ron(min)
(5) Flatness is defined as the difference between the maximum and minimum value of ron as measured over the specified analog signal ranges.
(6) Leakage parameters are 100% tested at the maximum-rated hot operating temperature and specified by correlation at TA = 25°C.
(7) OFF isolation = 20log10 (VCOM/VNO), VCOM = output, VNO = input to OFF switch

6.6 Electrical Characteristics (1.8-V Supply)(1) (2)

VCC = 1.65 V to 1.95 V, TA = –40 to 85°C, VIH = 1 V, VIL = 0.4 V (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP(2) MAX UNIT
ANALOG SWITCH
VCOM, VNO, VNC Analog signal range 0 V+ V
Ron ON-state resistance VCC = 1.8 V, ICOM  = –10 mA,
VNO, VNC  = 0.9 V		 25 °C 1 1.5 Ω
Full 2
ΔRon ON-state resistance match between channels(1) VCC = 1.8 V, ICOM  = –10 mA,
VNO, VNC  = 0.9 V		 25 °C 0.09 0.15 Ω
Full 0.25
Ron(flat) ON-state resistance flatness(3) VCC = 1.8 V, ICOM  = –10 mA,
0 ≤ VNO, VNC ≤ VCC 		25 °C 0.7 0.9 Ω
Full 1.5
INO(OFF) NO
OFF leakage current(4) 		VCC = 1.95 V, VCOM  = 0.15 V, 1.65 V,
VNO  = 1.8 V, 0.15 V		 25 °C –1 0.5 1 nA
Full –10 10
ICOM(OFF) COM
OFF leakage current(4) 		VCC = 1.95 V, VCOM  = 0.15 V, 1.65 V,
VNO,  = 1.8 V, 0.15 V		 25 °C –1 0.5 1 nA
Full –10 10
ICOM(ON) COM
ON leakage current(4) 		VCC = 1.95 V, VCOM  = 0.15 V, 1.65 V,
VNO = 0.15 V, 1.65 V, or floating		 25 °C –1 0.01 1 nA
Full –3 3
DYNAMIC
tON Turn-on time VNO, VNC  = 1.5 V, RL = 50 Ω,
CL = 35 pF, See Figure 14 		25 °C 6 18 ns
Full 20
tOFF Turn-off time VNO, VNC  = 1.5 V, RL = 50 Ω,
CL = 35 pF, See Figure 14 		25 °C 5 10 ns
Full 12
QC Charge injection VGEN = 0, RGEN = 0, CL = 1 nF,
See Figure 15 		25 °C 3.2 pC
CNO(OFF) NO OFF capacitance f = 1 MHz, See Figure 16 25 °C 23 pF
CCOM(OFF) COM OFF capacitance f = 1 MHz, See Figure 16 25 °C 20
CCOM(ON) COM ON capacitance f = 1 MHz, See Figure 16 25 °C 43
BW Bandwidth RL = 50 Ω, Switch ON 25 °C 123 MHz
OISO OFF isolation(5) RL = 50 Ω, CL = 5 pF,
See Figure 17 		f = 10 MHz 25 °C –61 dB
f = 100 MHz –36
XTALK Crosstalk RL = 50 Ω, CL = 5 pF,
See Figure 17 		f = 10 MHz 25 °C –95 dB
f = 100 MHz –73
THD Total harmonic distortion f = 20 Hz to 20 kHz, VCOM = 2 VP-P RL = 32 Ω 25 °C 0.14%
RL = 600 Ω 0.013%
DIGITAL CONTROL INPUTS (IN1, IN2)
VIH Input logic high Full 1 V
VIL Input logic low Full 0.4
IIN Input leakage current VI = 0 or VCC 25 °C 0.1 5 nA
Full –10 10
SUPPLY
VCC Power-supply range 1.65 1.95 V
ICC Positive-supply current VI = 0 or VCC 25 °C 0.05 μA
Full 0.5
(1) ΔRon = Ron(max) – Ron(min)
(2) Typical values are at TA = 25°C.
(3) Flatness is defined as the difference between the maximum and minimum value of ron as measured over the specified analog signal ranges.
(4) Leakage parameters are 100% tested at the maximum-rated hot operating temperature and specified by correlation at TA = 25°C.
(5) OFF isolation = 20log10 (VCOM/VNO), VCOM = output, VNO = input to OFF switch

6.7 Typical Characteristics

TS3A4741 TS3A4742 grp1_cds227.gif
Figure 1. Ron vs VCOM
TS3A4741 TS3A4742 grp3_cds227.gif
Figure 3. Ron vs VCOM (VCC = 2.7 V)
TS3A4741 TS3A4742 grp5_cds227.gif
Figure 5. QC vs VCOM
TS3A4741 TS3A4742 grp7_cds227.gif Figure 7. tON and tOFF vs Temperature
TS3A4741 TS3A4742 grp9_cds227.gif Figure 9. Gain vs Frequency (VCC = 3 V)
TS3A4741 TS3A4742 grp11_cds227.gif Figure 11. Total Harmonic Distortion vs Frequency
(RL = 32 Ω)
TS3A4741 TS3A4742 grp13_cds227.gif Figure 13. Crosstalk vs Frequency
(VCC = 3 V)
TS3A4741 TS3A4742 grp2_cds227.gif
Figure 2. Ron vs VCOM (VCC = 1.8 V)
TS3A4741 TS3A4742 grp4_cds227.gif
Figure 4. ION and IOFF vs Temperature
(VCC = 3.6 V)
TS3A4741 TS3A4742 grp6_cds227.gif
Figure 6. tON and tOFF vs Supply Voltage
TS3A4741 TS3A4742 grp8_cds227.gif Figure 8. ICC vs VCC
TS3A4741 TS3A4742 grp10_cds227.gif Figure 10. OFF Isolation vs Frequency
(VCC = 3 V)
TS3A4741 TS3A4742 grp11_cds227.gif Figure 12. Total Harmonic Distortion vs Frequency
(RL = 600 Ω)