SLAA334B September   2006  – August 2018

 

  1.   MSP430 Flash Memory Characteristics
    1.     Trademarks
    2. 1 Flash Memory
    3. 2 Simplified Flash Memory Cell
    4. 3 Flash Memory Parameters
      1. 3.1 Data Retention
        1. 3.1.1 Leakage Mechanism
        2. 3.1.2 Data Retention Time
      2. 3.2 Flash Endurance
      3. 3.3 Cumulative Program Time
    5. 4 Flash Enhancements With Software
      1. 4.1 EEPROM Emulation With Flash
      2. 4.2 Enhancing Flash Data Retention Time With Flash Refresh
      3. 4.3 Verify Flash Data With a Checksum or CRC
    6. 5 Conclusion
    7. 6 References
  2.   Revision History

6 References

  1. Y. Manabe, Detailed Observation of Small Leak Current in Flash Memories With Thin Tunnel Oxides, IEEE Std 1998, pp 95–99
  2. IEEE Standard Definitions and Characterization of Floating Gate Semiconductor Arrays, IEEE Std 1005–1991, 17 Oct 1991
  3. Michael Jonas and Hans-Martin Hilbig, MSP430 Endurance Testing, TI Technical Journal, April–June 2000
  4. CRC Implementation with MSP430 MCUs
  5. Sunil G. Gaitonde and Tenkasi V. Ramabadran, A Tutorial on CRC Computations, IEEE Micro, August 1988, pp 62–74
  6. Understanding MSP430 Flash Data Retention