SBOK103B February   2025  – March 2025 INA950-SEP

 

  1.   1
  2.   Abstract
  3. 1Overview
  4. 2SEE Mechanisms
  5. 3Test Device and Test Board Information
  6. 4Irradiation Facility and Setup
  7. 5Single-Event Latch-Up Results
  8. 6Single Event Transient Results
  9. 7Summary
  10. 8Confidence Interval Calculations
  11. 9References

9 References

  1. M. Shoga and D. Binder, "Theory of Single Event Latchup in Complementary Metal-Oxide Semiconductor Integrated Circuits", IEEE Trans. Nucl. Sci., Vol. 33(6), Dec. 1986, pp. 1714-1717
  2. G. Bruguier and J. M. Palau, "Single particle-induced latchup", IEEE Trans. Nucl. Sci., Vol. 43(2), Mar. 1996, pp. 522-532.
  3. G. H. Johnson, J. H. Hohl, R. D. Schrimpf and K. F. Galloway, "Simulating single-event burnout of n-channel power MOSFET's," in IEEE Transactions on Electron Devices, vol. 40, no. 5, pp. 1001-1008, May 1993.
  4. J. R. Brews, M. Allenspach, R. D. Schrimpf, K. F. Galloway,J. L. Titus and C. F. Wheatley, "A conceptual model of a single-event gate-rupture in power MOSFETs," in IEEE Transactions on Nuclear Science, vol. 40, no. 6, pp. 1959-1966, Dec. 1993.
  5. G. H. Johnson, R. D. Schrimpf, K. F. Galloway, and R. Koga,“Temperature dependence of single event burnout in n-channel power MOSFETs [for space application],” IEEE Trans. Nucl. Sci., 39(6), Dec. 1992, pp.1605-1612.
  6. Texas A&M University, TAMU Radiation Effects Facility, webpage.
  7. Ziegler, James F. The Stopping and RAnge of Ions in Matter, webpage.
  8. D. Kececioglu, Reliability and Life Testing Handbook, Vol. 1, PTR Prentice Hall, New Jersey, 1993, pp. 186-193.
  9. Midwestern State University, MSU FRIB, webpage
  10. A. J. Tylka, J. H. Adams, P. R. Boberg, et al.,"CREME96: A Revision of the Cosmic Ray Effects on MicroElectronics Code", IEEE Trans. on Nucl. Sci., Vol. 44(6), Dec. 1997, pp. 2150-2160.
  11. A. J. Tylka, W. F. Dietrich, and P. R. Boberg, "Probability distributions of high-energy solar-heavy-ion fluxes from IMP-8: 1973-1996", IEEE Trans. on Nucl. Sci.,Vol. 44(6), Dec. 1997, pp. 2140-2149.