SBOS584F November   2011  – September 2026 OPA180 , OPA2180 , OPA4180

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information: OPA180
    5. 6.5 Thermal Information: OPA2180
    6. 6.6 Thermal Information: OPA4180
    7. 6.7 Electrical Characteristics: VS = ±2V to ±18V (VS = 4V to 36V)
    8. 6.8 Typical Characteristics: Table of Graphs
    9. 6.9 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Operating Characteristics
      2. 7.3.2 EMI Rejection
      3. 7.3.3 Phase-Reversal Protection
      4. 7.3.4 Capacitive Load and Stability
      5. 7.3.5 Electrical Overstress
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Applications
      1. 8.2.1 Bipolar ±10V Analog Output from a Unipolar Voltage Output DAC
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Component Selection
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Discrete INA + Attenuation
      3. 8.2.3 RTD Amplifier
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.6 Thermal Information: OPA4180

THERMAL METRIC(1)OPA4180UNIT
D (SOIC)PW (TSSOP)
14 PINS14 PINS
RθJAJunction-to-ambient thermal resistance93.2106.9°C/W
RθJC(top)Junction-to-case (top) thermal resistance51.824.4°C/W
RθJBJunction-to-board thermal resistance49.459.3°C/W
ψJTJunction-to-top characterization parameter13.50.6°C/W
ψJBJunction-to-board characterization parameter42.254.3°C/W
RθJC(bot)Junction-to-case (bottom) thermal resistanceN/AN/A°C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.