SBOSAI8A March   2025  – July 2025 INA630

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Setting the Gain
        1. 7.3.1.1 Gain Error and Drift
      2. 7.3.2 Linear Input Voltage Range
      3. 7.3.3 Input Protection
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Reference Pin
      2. 8.1.2 Input Bias Current Return Path
    2. 8.2 Typical Applications
      1. 8.2.1 Current Shunt Monitoring in Battery Testing Systems
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. 9 Device and Documentation Support
    1. 9.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

8.2.1.3 Application Curves

Many modern signal-conditioning applications calibrate errors at room temperature. In battery testing systems, the errors resulting from temperature drifts are more relevant. In an application with the INA630, the change of resistance due to the temperature coefficient of resistance (TCR) of the external resistor network is most relevant for the drift performance.

Figure 8-4 shows a calculation of the drift error contribution of the INA630 including the gain error drift and offset drift performance. To demonstrate the effect of the external resistor network, the drift error contribution for a 10ppm/°C and 25ppm/°C resistor network are shown.

INA630 Maximum Drift Error (ppm) vs Temperature Rise (°C)
Note: Choosing resistors with good TC tracking can cancel the drift error contribution of the external resistor network.
Figure 8-4 Maximum Drift Error (ppm) vs Temperature Rise (°C)