SBOSAI8A March   2025  – July 2025 INA630

PRODUCTION DATA  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Setting the Gain
        1. 7.3.1.1 Gain Error and Drift
      2. 7.3.2 Linear Input Voltage Range
      3. 7.3.3 Input Protection
    4. 7.4 Device Functional Modes
  9. Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Reference Pin
      2. 8.1.2 Input Bias Current Return Path
    2. 8.2 Typical Applications
      1. 8.2.1 Current Shunt Monitoring in Battery Testing Systems
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
  10. Device and Documentation Support
    1. 9.1 Third-Party Products Disclaimer
    2. 9.2 Documentation Support
      1. 9.2.1 Related Documentation
    3. 9.3 Receiving Notification of Documentation Updates
    4. 9.4 Support Resources
    5. 9.5 Trademarks
    6. 9.6 Electrostatic Discharge Caution
    7. 9.7 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

Description

The INA630 is a high-precision instrumentation amplifier that offers low power consumption and operates over a wide single-supply or dual-supply range. The INA630 is optimized for small differential voltages (±125mV maximum) while providing excellent common-mode suppression (126dB CMRR). The INA630 offers flexible gain setting with an external resistor divider of minimum G = 20V/V.

The INA630 is based on an indirect current feedback architecture that offers low gain error and non-linearity. Due to the architecture the reference pin impedance does not degrade the CMRR performance. The device enables wider input and output voltage range compared to traditional instrumentation amplifiers. The device has high precision as a result of super-beta input transistors, which provide low input offset voltage, offset voltage drift, low bias current and current noise.

Package Information
PART NUMBERPACKAGE(1)PACKAGE SIZE(2)
INA630DDF (SOT-23-THN, 8)2.9mm × 2.8mm
For all available packages, see Section 11.
The package size (length × width) is a nominal value and includes pins, where applicable.
INA630 INA630 Simplified Internal SchematicINA630 Simplified Internal Schematic
INA630 CMRR vs Frequency (RTI)
 
CMRR vs Frequency (RTI)