SCDS473 July   2025 TMUX9612

ADVANCE INFORMATION  

  1.   1
  2. Features
  3. Applications
  4. Description
  5. Device Comparison Table
  6. Pin Configuration and Functions
  7. Specifications
    1. 6.1  Absolute Maximum Ratings: TMUX961x Devices
    2. 6.2  ESD Ratings
    3. 6.3  Recommended Operating Conditions: TMUX961x Devices
    4. 6.4  Source and Drain Continuous Current
    5. 6.5  Source and Drain Pulse Current
    6. 6.6  Electrical Characteristics (Global): TMUX961x Devices
    7. 6.7  Electrical Characteristics (±110V Dual Supply)
    8. 6.8  Electrical Characteristics (±50V Dual Supply)
    9. 6.9  Electrical Characteristics (100V Single Supply)
    10. 6.10 Switching Characteristics: TMUX961x Devices
    11. 6.11 Typical Characteristics
  8. Parameter Measurement Information
    1. 7.1 On-Resistance
    2. 7.2 Off-Leakage Current
    3. 7.3 On-Leakage Current
    4. 7.4 Device Turn-On and Turn-Off Time
    5. 7.5 Charge Injection
    6. 7.6 Off Isolation
    7. 7.7 Crosstalk
    8. 7.8 Bandwidth
    9. 7.9 THD + Noise
  9. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Bidirectional Operation
      2. 8.3.2 Flat On-Resistance
      3. 8.3.3 Protection Features
        1. 8.3.3.1 Fail-Safe Logic
        2. 8.3.3.2 ESD Protection
        3. 8.3.3.3 Latch-Up Immunity
      4. 8.3.4 1.8V Logic Compatible Inputs
      5. 8.3.5 Integrated Pull-Down Resistor on Logic Pins
    4. 8.4 Device Functional Modes
      1. 8.4.1 Normal Mode
      2. 8.4.2 Truth Tables
  10. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

Electrical Characteristics (±110V Dual Supply)

VDD = +110V, VSS = –110V, GND = 0V (unless otherwise noted) 
Typical at TA = 25℃  (unless otherwise noted)
PARAMETER TEST CONDITIONS TA MIN TYP MAX UNIT
ANALOG SWITCH
RON On-resistance VS = –105V to +105V
ID = –10mA
25°C 14 19.6 Ω
–40°C to +50°C 21
–40°C to +85°C 22.4
–40°C to +125°C 28
ΔRON On-resistance mismatch between channels VS = –105V to +105V
ID = –10mA
25°C 0.28 0.84 Ω
–40°C to +50°C 1
–40°C to +85°C 1.12
–40°C to +125°C 1.4
RON FLAT On-resistance flatness VS = –105V to +105V
ID = –10mA
25°C 0.435 Ω
RON DRIFT On-resistance drift VS = 0V, IS = –10mA –40°C to +125°C 0.08 Ω/°C
IS(OFF) Source off leakage current(1) VDD = 110V, VSS = –110V
Switch state is off
VS = +105V / –105V
VD = –105V / +105V
25°C 80 TBD pA
–40°C to +50°C TBD 315 TBD
–40°C to +85°C TBD TBD
–40°C to +125°C TBD TBD
ID(OFF) Drain off leakage current(1) VDD = 110V, VSS = –110V
Switch state is off
VS = +105V / –105V
VD = –105V / +105V
25°C 80 TBD pA
–40°C to +50°C TBD 315 TBD
–40°C to +85°C TBD TBD
–40°C to +125°C TBD TBD
IS(ON)
ID(ON)
Channel on leakage current(2) VDD = 110V, VSS = –110V
Switch state is on
VS = VD = ±105V
25°C -50 TBD pA
–40°C to +50°C TBD 120 TBD
–40°C to +85°C TBD TBD
–40°C to +125°C TBD TBD
When VS is positive,VD is negative. And when VS is negative, VD is positive.
When VS is at a voltage potential, VD is floating. And when VD is at a voltage potential, VS is floating.