SCES424O January   2003  – June 2025 SN74LVC1G3157

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  Thermal Information
    3. 5.3  ESD Ratings
    4. 5.4  Recommended Operating Conditions
    5. 5.5  Electrical Characteristics
    6. 5.6  Switching Characteristics 85C (DBV, DCK)
    7. 5.7  Switching Characteristics 125C (DBV, DCK)
    8. 5.8  Switching Characteristics 85C (YZP, DSF. DTB. DRY, DRL)
    9. 5.9  Switching Characteristics 125C (YZP, DSF. DTB. DRY, DRL)
    10. 5.10 Analog Channel Specifications
  7. 6 Parameter Measurement Information
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
  10. 9 Power Supply Recommendations
  11. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  12. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  13. 12Revision History
  14. 13Mechanical, Packaging, and Orderable Information

5.5 Electrical Characteristics

Over operating free-air temperature range (unless otherwise noted)(1)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
SN74LVC1G3157
VCC V VI/o V IO mA TA
rON
 		 ON-state switch resistance(2) 1.65 VI = 0 V IO = 4 mA 25°C 11 Ω
–40°C to +85°C 20
–40°C to +125°C 20
VI = 1.65 IO = -4 mA 25°C 15
–40°C to +85°C 50
–40°C to +125°C 50
2.3 VI = 0 V IO = 8 mA 25°C 8
–40°C to +85°C 12
–40°C to +125°C 12
VI = 2.3 V IO = -8 mA 25°C 11
–40°C to +85°C 30
–40°C to +125°C 30
3 VI = 0 V IO = 24 mA 25°C 7
–40°C to +85°C 9
–40°C to +125°C 9
VI = 3 V IO = -24 mA 25°C 9
–40°C to +85°C 20
–40°C to +125°C 20
4.5 VI = 0 V IO = 30 mA 25°C 6
–40°C to +85°C 7
–40°C to +125°C 7
VI = 2.4 V IO = 30 mA 25°C 7
–40°C to +85°C 12
–40°C to +125°C 12
VI = 4.5 V IO = -30 mA 25°C 7
–40°C to +85°C 15
–40°C to +125°C 15
rrange (YZP, DSF. DTB. DRY, DRL) ON-state switch resistance over signal range(2) (3) 1.65 0 ≤ VBn ≤ VCC IA = -4 mA 25°C 140 Ω
–40°C to +85°C 140
–40°C to +125°C 140
2.3 IA = -8 mA 25°C 45
–40°C to +85°C 45
–40°C to +125°C 45
3 IA = -24 mA 25°C 18
–40°C to +85°C 18
–40°C to +125°C 18
4.5 IA = -30 mA 25°C 10
–40°C to +85°C 10
–40°C to +125°C 10
rrange (DBV, DCK) ON-state switch resistance over signal range(2) (3) 1.65 0 ≤ VBn ≤ VCC IA = -4 mA 25°C 200 Ω
–40°C to +85°C 200
–40°C to +125°C 200
2.3 IA = -8 mA 25°C 65
–40°C to +85°C 65
–40°C to +125°C 65
3 IA = -24 mA 25°C 25
–40°C to +85°C 25
–40°C to +125°C 25
4.5 IA = -30 mA 25°C 15
–40°C to +85°C 15
–40°C to +125°C 15
ΔrON Maximum ON resistance between any two channels (2)  (4)  (5) 1.65 VBn = 1.15 V IA = -4 mA 25°C 0.5
Ω
–40°C to +85°C 0.5
–40°C to +125°C 0.5
2.3 VBn = 1.6 V IA = -8 mA 25°C 0.1
–40°C to +85°C 0.1
–40°C to +125°C 0.3
3 VBn = 2.1 V IA = -24 mA 25°C 0.1
–40°C to +85°C 0.1
–40°C to +125°C 0.3
4.5 VBn = 3.15 V IA = -30 mA 25°C 0.1
–40°C to +85°C 0.1
–40°C to +125°C 0.2
ron(flat) ON resistance flatness(2)  (4)  (6) 1.65 0 ≤ VBn ≤ VCC IA = -4 mA 25°C 110
Ω
–40°C to +85°C 110
–40°C to +125°C 110
2.3 IA = -8 mA 25°C 26
–40°C to +85°C 26
–40°C to +125°C 40
3 IA = -24 mA 25°C 9
–40°C to +85°C 9
–40°C to +125°C 10
4.5 IA = -30 mA 25°C 4
–40°C to +85°C 4
–40°C to +125°C 5
Ioff (7) Switch OFF leakage current 1.65 to 5.5 0 ≤ VI, VO ≤ VCC 25°C ±0.05 ±0.1 µA
–40°C to +85°C ±1
–40°C to +125°C ±1
IS(on) ON-state switch leakage current 5.5 VI = VCC or GND, VO = Open 25°C ±0.1 µA
–40°C to +85°C ±1
–40°C to +125°C ±1
IIN Control input current 0 to 5.5 0 ≤ VIN ≤ VCC 25°C ±0.05 ±0.1 µA
–40°C to +85°C ±1
–40°C to +125°C ±1
ICC
Supply current
 		 5.5 S = VCC or GND 25°C 1 µA
–40°C to +85°C 10
–40°C to +125°C 35
ΔICC
Quiescent Device Current, IDD Max
 		 5.5 S = VCC - 0.6 V 25°C 500 µA
–40°C to +85°C 500
–40°C to +125°C 500
CI Control input capacitance
 		 5 S (VDD/2) 25°C 2.7 pF
–40°C to +85°C 2.7
–40°C to +125°C 2.7
Cio(off) Switch input/output capacitance
 		 5 Bn (VDD/2) 25°C 5.2 pF
–40°C to +85°C 5.2
–40°C to +125°C 5.2
Cio(on) Switch input/output capacitance
 		 5 Bn (VDD/2) 25°C 17.3 pF
–40°C to +85°C 17.3
–40°C to +125°C 17.3
A (VDD/2) 25°C 17.3
–40°C to +85°C 17.3
–40°C to +125°C 17.3
(1) TA = 25C
(2) Measured by the voltage drop between I/O pins at the indicated current through the switch. ON-state resistance is determined by the lower of the voltages on the two (A or B) ports.
(3)
Specified by design

(4) Δron = ron(max) – ron(min) measured at identical VCC, temperature, and voltage levels
(5) This parameter is characterized, but not production tested.
(6) Flatness is defined as the difference between the maximum and minimum values of on-state resistance over the specified range of conditions.
(7) Ioff is the same as IS(off) (off-state switch leakage current).