over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted)PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT |
---|
| Read and write endurance | | 1015 | | | cycles |
tRetention | Data retention duration | TJ = 25°C | 100 | | | years |
TJ = 70°C | 40 | | |
TJ = 85°C | 10 | | |
IWRITE | Current to write into FRAM | | | IREAD(1) | | nA |
IERASE | Erase current | | | N/A(2) | | nA |
tWRITE | Write time | | | tREAD(3) | | ns |
tREAD | Read time | NWAITSx = 0 | | 1 / fSYSTEM(4) | | ns |
NWAITSx = 1 | | 2 / fSYSTEM(4) | |
(1) Writing to FRAM does not require a setup sequence or additional power when compared to reading from FRAM. The FRAM read current IREAD is included in the active mode current consumption parameter IAM,FRAM.
(2) FRAM does not require a special erase sequence.
(3) Writing into FRAM is as fast as reading.
(4) The maximum read (and write) speed is specified by fSYSTEM using the appropriate wait state settings (NWAITSx).