SLOSEE7 May   2025 OPA810-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics: 24V
    6. 6.6 Electrical Characteristics: 5V
    7. 6.7 Typical Characteristics: VS = 24V
    8. 6.8 Typical Characteristics: VS = 5V
    9. 6.9 Typical Characteristics: ±2.375V to ±12V Split Supply
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Architecture
      2. 7.3.2 ESD Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Split-Supply Operation (±2.375V to ±13.5V)
      2. 7.4.2 Single-Supply Operation (4.75V to 27V)
  9. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 Amplifier Gain Configurations
      2. 8.1.2 Selection of Feedback Resistors
      3. 8.1.3 Noise Analysis and the Effect of Resistor Elements on Total Noise
    2. 8.2 Typical Applications
      1. 8.2.1 Transimpedance Amplifier
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
        3. 8.2.1.3 Application Curves
      2. 8.2.2 Multichannel Sensor Interface
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
        1. 8.4.1.1 Thermal Considerations
      2. 8.4.2 Layout Example
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) OPA810-Q1 UNIT
DBV (SOT-23)
5 PINS
RθJA Junction-to-ambient thermal resistance 183.2 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 80.5 °C/W
RθJB Junction-to-board thermal resistance 50.2 °C/W
ψJT Junction-to-top characterization parameter 18.0 °C/W
ψJB Junction-to-board characterization parameter 49.8 °C/W
(1) For information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.