SLUSG02 May 2025 TPS6286A06D
PRODUCTION DATA
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
|---|---|---|---|---|---|---|
| SUPPLY | ||||||
| IQ_VIN | Quiescent current | EN = High, no load, device not switching, TJ = 25℃ | 5.1 | 9 | µA | |
| IQ_OUT | Operating quiescent current into OUT pin | EN = High, no load, device not switching, VOUT = 1.8V, TJ = 25℃ | 18 | µA | ||
| ISD | Shutdown current | EN = Low, TJ = 25℃, EN has not been triggered once |
0.24 | 0.75 | µA | |
| ISD | Shutdown current | VIN=5V, TJ = 25℃, EN = Low, after EN has been triggered once | 6.5 | µA | ||
| VUVLO | Undervoltage lock out threshold | VIN rising | 2.2 | 2.3 | 2.4 | V |
| VIN falling | 2.1 | 2.2 | 2.3 | V | ||
| TJSD | Thermal shutdown threshold | TJ rising | 150 | °C | ||
| Thermal shutdown hysteresis | TJ falling | 20 | °C | |||
| LOGIC INTERFACE | ||||||
| VIH | High-level input threshold voltage at EN and VSET/MODE | 0.9 | V | |||
| VIL | Low-level input threshold voltage at EN and VSET/MODE | 0.4 | V | |||
| RPull_down_VSET_MODE | Pull-down resistor on VSET/MODE pin | TJ=25 ℃ , VIN= 5V, VVSET/MODE= 5V, After R2D read is completed. | 3.3 | MΩ | ||
| IEN,LKG | Input leakage current into EN pin | TJ = 25℃, VIN= 5.0V, VEN= 0.4V | 0.01 | 0.1 | µA | |
| RPull_down_EN | Pull-down resistor on EN pin | TJ=25 ℃ , VIN= 5V, VEN= 5V | 2.25 | MΩ | ||
| STARTUP, POWER GOOD | ||||||
| tDelay | Enable delay time | Time from EN high to device starts switching 249kΩ resistor connected between VSET/MODE and GND |
420 | 840 | 1200 | µs |
| tRamp | Output voltage ramp time | Time from device starts switching to power good (no external capacitor connected) | 1 | 1.5 | 1.85 | ms |
| RPull_up_PG | PG INTERNAL Pull Up Resistor to VIN | TJ=25 ℃ | 500 | kΩ | ||
| VPG | Power-good lower threshold | VOUT referenced to VOUT nominal | 85 | 91 | 96 | % |
| Power-good upper threshold | VOUT referenced to VOUT nominal | 103 | 111 | 120 | % | |
| VPG,OL | Low-level output voltage | Isink = 1mA | 0.36 | V | ||
| Iss | SS pin source current | 20 | µA | |||
| tPG,DLY | Power-good deglitch delay | Rising and falling edges | 34 | µs | ||
| OUTPUT | ||||||
| VOUT | Output voltage accuracy | Fixed voltage operation, FPWM, no load, TJ = 25°C | –0.7 | 0.7 | % | |
| VOUT | Output voltage accuracy | Fixed voltage operation, FPWM, no load | –1 | 1 | % | |
| VFB | Feedback voltage | Adjustable voltage operation | 594 | 600 | 606 | mV |
| IFB,LKG | Input leakage into FB pin | Adjustable voltage operation, VFB = 0.6V, TJ = 25℃ | 0.01 | 0.1 | µA | |
| RDIS | Output discharge resistor at OUT pin | 4.3 | Ω | |||
| Load regulation | VOUT = 0.9V, FPWM | 0.04 | %/A | |||
| POWER SWITCH | ||||||
| RDS(on) | High-side FET on-resistance | 8 | mΩ | |||
| Low-side FET on-resistance | 8 | mΩ | ||||
| ILIM | High-side FET forward current limit | 7.3 | 8 | 9 | A | |
| ILIM | Low-side FET forward current limit | 6.5 | A | |||
| ILIM | Low-side FET negative current limit | –3 | A | |||
| fSW | PWM switching frequency | IOUT = 1A, VOUT = 0.9V | 1.2 | MHz | ||