SLVK235 September   2025 CDCLVP111-SEP

 

  1.   1
  2.   Abstract
  3.   Trademarks
  4. 1Introduction
  5. 2Single-Event Effects (SEE)
  6. 3Device and Test Board Information
  7. 4Irradiation Facility and Setup
  8. 5LETEFF and Range Calculation
  9. 6Test Setup and Procedures
  10. 7Destructive Single-Event Effects (DSEE)
    1. 7.1 Single-Event Latch-up (SEL) Results
  11. 8Single-Event Transients (SET)
  12. 9Summary
  13.   A References

Device and Test Board Information

The CDCLVP111-SEP is packaged in a 32-pin thermally enhanced qual flat package (HLQFP) as shown in Figure 3-1. The CDCLVP111-SEP evaluation module was used to evaluate the performance and characteristics of the CDCLVP111-SEP under heavy ion radiation as shown in Figure 3-2. The schematic is shown in Figure 3-3.

 Photograph of Delidded
                    CDCLVP111-SEP (Left) and Pinout Diagram (Right) Figure 3-1 Photograph of Delidded CDCLVP111-SEP (Left) and Pinout Diagram (Right)
Note: The package was decapped to reveal the die face for all heavy-ion testing.
 CDCLVP111-SEP EVM Top ViewFigure 3-2 CDCLVP111-SEP EVM Top View
 CDCLVP111-SEP EVM Schematic
                    1 Figure 3-3 CDCLVP111-SEP EVM Schematic 1
 CDCLVP111-SEP EVM Schematic 2 Figure 3-4 CDCLVP111-SEP EVM Schematic 2
 CDCLVP111-SEP EVM Schematic 3 Figure 3-5 CDCLVP111-SEP EVM Schematic 3
 CDCLVP111-SEP EVM Schematic 4 Figure 3-6 CDCLVP111-SEP EVM Schematic 4
 CDCLVP111-SEP EVM Schematic 5 Figure 3-7 CDCLVP111-SEP EVM Schematic 5
 CDCLVP111-SEP EVM Schematic 6 Figure 3-8 CDCLVP111-SEP EVM Schematic 6