SLVSCV8E December   2015  – June 2025 TPS4H160-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Pin Current and Voltage Conventions
      2. 7.3.2 Accurate Current Sense
      3. 7.3.3 Adjustable Current Limit
      4. 7.3.4 Inductive-Load Switching-Off Clamp
      5. 7.3.5 Fault Detection and Reporting
        1. 7.3.5.1 Diagnostic Enable Function
        2. 7.3.5.2 Multiplexing of Current Sense
        3. 7.3.5.3 Fault Table
        4. 7.3.5.4 STx and FAULT Reporting
      6. 7.3.6 Full Diagnostics
        1. 7.3.6.1 Short-to-GND and Overload Detection
        2. 7.3.6.2 Open-Load Detection
          1. 7.3.6.2.1 Channel On
          2. 7.3.6.2.2 Channel Off
        3. 7.3.6.3 Short-to-Battery Detection
        4. 7.3.6.4 Reverse Polarity Detection
        5. 7.3.6.5 Thermal Fault Detection
          1. 7.3.6.5.1 Thermal Shutdown
      7. 7.3.7 Full Protections
        1. 7.3.7.1 UVLO Protection
        2. 7.3.7.2 Loss-of-GND Protection
        3. 7.3.7.3 Protection for Loss of Power Supply
        4. 7.3.7.4 Reverse-Current Protection
        5. 7.3.7.5 MCU I/O Protection
    4. 7.4 Device Functional Modes
      1. 7.4.1 Working Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Examples
        1. 8.4.2.1 Without a GND Network
        2. 8.4.2.2 With a GND Network
  10. 9 Device and Documentation Support
    1. 9.1 Receiving Notification of Documentation Updates
    2. 9.2 Support Resources
    3. 9.3 Trademarks
    4. 9.4 Electrostatic Discharge Caution
    5. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.3.7.4 Reverse-Current Protection

Reverse current occurs in two conditions: short to battery and reverse polarity.

  • When a short to the battery occurs, there is only reverse current through the body diode. IR(1) specifies the limit of the reverse current.
  • In a reverse-polarity condition, there are reverse currents through the body diode and the device GND pin. IR(2) specifies the limit of the reverse current. The GND pin maximum current is specified in the Absolute Maximum Ratings.

To protect the device, TI recommends two types of external circuitry.

  • Adding a blocking diode. Both the IC and load are protected when in reverse polarity.
    TPS4H160-Q1 Reverse-Current External Protection, Method 1Figure 7-14 Reverse-Current External Protection, Method 1
  • Adding a GND network. The reverse current through the device GND is blocked. The reverse current through the FET is limited by the load itself. TI recommends a resistor in parallel with the diode as a GND network. The recommended selection are 1-kΩ resistor in parallel with an >100-mA diode. If multiple high-side switches are used, the resistor and diode can be shared among devices. The reverse current protection diode in the GND network forward voltage should be less than 0.6 V in any circumstances. In addition a minimum resistance of 4.7 K is recommended on the I/O pins.
TPS4H160-Q1 Reverse-Current External Protection, Method 2Figure 7-15 Reverse-Current External Protection, Method 2