SLVSH58B November   2024  – January 2025 DRV81004-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
      1. 5.5.1 SPI Timing Requirements
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Control Pins
        1. 6.3.1.1 Input Pins
        2. 6.3.1.2 nSLEEP Pin
      2. 6.3.2 Power Supply
        1. 6.3.2.1 Modes of Operation
          1. 6.3.2.1.1 Power-up
          2. 6.3.2.1.2 Sleep mode
          3. 6.3.2.1.3 Idle mode
          4. 6.3.2.1.4 Active mode
          5. 6.3.2.1.5 Limp Home mode
          6. 6.3.2.1.6 Reset condition
      3. 6.3.3 Power Stage
        1. 6.3.3.1 Switching Resistive Loads
        2. 6.3.3.2 Inductive Output Clamp
        3. 6.3.3.3 Maximum Load Inductance
        4. 6.3.3.4 Switching Channels in parallel
      4. 6.3.4 Protection and Diagnostics
        1. 6.3.4.1 Undervoltage on VM
        2. 6.3.4.2 Overcurrent Protection
        3. 6.3.4.3 Over Temperature Protection
        4. 6.3.4.4 Over Temperature Warning
        5. 6.3.4.5 Over Temperature and Overcurrent Protection in Limp Home mode
        6. 6.3.4.6 Reverse Polarity Protection
        7. 6.3.4.7 Over Voltage Protection
        8. 6.3.4.8 Output Status Monitor
      5. 6.3.5 SPI Communication
        1. 6.3.5.1 SPI Signal Description
          1. 6.3.5.1.1 Chip Select (nSCS)
            1. 6.3.5.1.1.1 Logic high to logic low Transition
            2. 6.3.5.1.1.2 Logic low to logic high Transition
          2. 6.3.5.1.2 Serial Clock (SCLK)
          3. 6.3.5.1.3 Serial Input (SDI)
          4. 6.3.5.1.4 Serial Output (SDO)
        2. 6.3.5.2 Daisy Chain Capability
        3. 6.3.5.3 SPI Protocol
        4. 6.3.5.4 SPI Registers
          1. 6.3.5.4.1  Standard Diagnosis Register
          2. 6.3.5.4.2  Output control register
          3. 6.3.5.4.3  Input 0 Mapping Register
          4. 6.3.5.4.4  Input 1 Mapping Register
          5. 6.3.5.4.5  Input Status Monitor Register
          6. 6.3.5.4.6  Open Load Current Control Register
          7. 6.3.5.4.7  Output Status Monitor Register
          8. 6.3.5.4.8  Configuration Register
          9. 6.3.5.4.9  Output Clear Latch Register
          10. 6.3.5.4.10 Configuration Register 2
  8. 7 Application and Implementation
    1. 7.1 Application Information
      1. 7.1.1 Typical Application
      2. 7.1.2 Suggested External Components
      3. 7.1.3 Application Plots
    2. 7.2 Layout
      1. 7.2.1 Layout Guidelines
      2. 7.2.2 Package Footprint Compatibility
  9. 8 Device and Documentation Support
    1. 8.1 Receiving Notification of Documentation Updates
    2. 8.2 Support Resources
    3. 8.3 Trademarks
    4. 8.4 Electrostatic Discharge Caution
    5. 8.5 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

6.3.4.6 Reverse Polarity Protection

In Reverse Polarity or Reverse Battery condition, power dissipation is caused by the body diode of each MOSFET. Each ESD diode of the logic and supply pins contributes to total power dissipation. The reverse current through the channels has to be limited by the connected loads. The current through digital power supply VDD and input pins has to be limited as well (please refer to Section 5.1).

Note:

No protection mechanism like temperature protection or current limitation is active during reverse polarity.