SLVSHP9 July   2026 TPS544A28

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Related Products
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1  D-CAP4 Control
      2. 7.3.2  Internal VCC LDO and Using External Bias On the VCC Pin
        1. 7.3.2.1 Powering the Device From a Single Bus
        2. 7.3.2.2 Powering the Device From a Split-Rail Configuration
      3. 7.3.3  Multifunction Select (MS1) Pin
      4. 7.3.4  Multifunction Select (MS2) Pin
      5. 7.3.5  PMBus® Address (ADR) Pin
      6. 7.3.6  Output Voltage Setting
        1. 7.3.6.1 Setting VBOOT and VOUT_SCALE_LOOP
        2. 7.3.6.2 Setting Output Voltage (Internal Feedback)
        3. 7.3.6.3 Setting Output Voltage (External Feedback)
      7. 7.3.7  Switching Frequency
      8. 7.3.8  Dynamic Voltage Slew Rate
      9. 7.3.9  Enable
      10. 7.3.10 Soft Start and Soft Stop
      11. 7.3.11 Power Good
      12. 7.3.12 Overvoltage and Undervoltage Protection
      13. 7.3.13 Remote Sense
      14. 7.3.14 Low-side MOSFET Zero-Crossing
      15. 7.3.15 Current Sense and Positive Overcurrent Protection
      16. 7.3.16 Low-side MOSFET Negative Current Limit
      17. 7.3.17 Output Voltage Discharge
      18. 7.3.18 UVLO Protection
      19. 7.3.19 Telemetry
      20. 7.3.20 Thermal Shutdown
    4. 7.4 Device Functional Modes
      1. 7.4.1 Auto-Skip (PFM) Eco-mode Light Load Operation
      2. 7.4.2 Forced Continuous-Conduction Mode
  9. 8 Programming Registers
    1. 8.1 Register Map
      1. 8.1.1  OPERATION (Address = 01h)
      2. 8.1.2  ON_OFF_CONFIG (Address = 02h)
      3. 8.1.3  CLEAR_FAULTS (Address = 03h)
      4. 8.1.4  WRITE_PROTECT (Address = 10h)
      5. 8.1.5  STORE_USER_ALL (Address = 15h)
      6. 8.1.6  RESTORE_USER_ALL (Address = 16h)
      7. 8.1.7  CAPABILITY (Address = 19h)
      8. 8.1.8  VOUT_MODE (Address = 20h)
      9. 8.1.9  VOUT_COMMAND (Address = 21h)
      10.      57
      11. 8.1.10 VOUT_MARGIN_HIGH (Address = 25h)
      12. 8.1.11 VOUT_MARGIN_LOW (Address = 26h)
      13. 8.1.12 VOUT_TRANSITION_RATE (Address = 27h)
      14. 8.1.13 61
      15. 8.1.14 VOUT_SCALE_LOOP (Address = 29h)
      16. 8.1.15 FREQUENCY_SWITCH (Address = 33h)
      17. 8.1.16 64
      18. 8.1.17 VOUT_OV_FAULT_RESPONSE (Address = 41h)
      19. 8.1.18 VOUT_UV_FAULT_RESPONSE (Address = 45h)
      20. 8.1.19 IOUT_OC_FAULT_LIMIT (Address = 46h)
      21.      68
      22. 8.1.20 TON_DELAY (Address = 60h)
      23. 8.1.21 TON_RISE (Address = 61h)
      24.      71
      25. 8.1.22 TOFF_DELAY (Address = 64h)
      26. 8.1.23 TOFF_FALL (Address = 65h)
      27. 8.1.24 STATUS_BYTE (Address = 78h)
      28. 8.1.25 STATUS_WORD (Address = 79h)
      29. 8.1.26 STATUS_CML (Address = 7Eh)
      30. 8.1.27 STATUS_MFR_SPECIFIC (Address = 80h)
      31. 8.1.28 READ_VOUT (Address = 8Bh)
      32. 8.1.29 READ_IOUT (Address = 8Ch)
      33. 8.1.30 READ_TEMP1 (Address = 8Dh)
      34. 8.1.31 PMBUS_REVISION (Address = 98h)
      35. 8.1.32 MFR_ID (Address = 99h)
      36. 8.1.33 MFR_MODEL (Address = 9Ah)
      37. 8.1.34 MFR_REVISION (Address = 9Bh)
      38. 8.1.35 IC_DEVICE_ID (Address = ADh)
      39. 8.1.36 IC_DEVICE_REV (Address = AEh)
      40. 8.1.37 SYS_CFG_USER1 (Address = D1h)
      41. 8.1.38 PASSKEY (Address = D2h)
      42. 8.1.39 COMP (Address = D4h)
      43.      90
      44. 8.1.40 VBOOT (Address = D5h)
      45.      92
      46. 8.1.41 NVM_CHECKSUM (Address = D9h)
      47. 8.1.42 FUSION_ID0 (Address = FCh)
      48. 8.1.43 FUSION_ID1 (Address = FDh)
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Output Voltage Setting Point
        2. 9.2.2.2 Choose the Switching Frequency
        3. 9.2.2.3 Choose the Inductor
        4. 9.2.2.4 Choose the Output Capacitor
        5. 9.2.2.5 Choose the Input Capacitors (CIN)
        6. 9.2.2.6 VCC Bypass Capacitor
        7. 9.2.2.7 BOOT Capacitor
        8. 9.2.2.8 PG Pullup Resistor
        9. 9.2.2.9 Choose the PMBus® Address and Fault Recovery Mode
      3. 9.2.3 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Example
      3. 9.4.3 Thermal Performance On TI EVM
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

9.2.2.5 Choose the Input Capacitors (CIN)

The device requires input bypass capacitors between both pairs of VIN and PGND pins to bypass the power-stage. The bypass capacitors must be placed as close as possible to the pins of the IC as the layout allows. At least 20µF nominal of ceramic capacitance and two high frequency ceramic bypass capacitors are required. A 0.1μF to 1μF capacitor must be placed as close as possible to both VIN pins 4 and 12 on the same side of the board of the device to provide the required high frequency bypass, to reduce the high frequency overshoot and undershoot on across the power-stage on the VIN and SW pins. TI recommends at least 1μF of bypass capacitance as close as possible to each VIN pin to minimize the input voltage ripple. The ceramic capacitors must be a high-quality dielectric of X6S or better for the high capacitance-to-volume ratio and stable characteristics across temperature. In addition to this requirement, more bulk capacitance can be needed on the input depending on the application to minimize variations on the input voltage during transient conditions.

Use Equation 22 to calculate the input capacitance required to meet a specific input ripple target. A recommended target input voltage ripple is 5% the minimum input voltage, 400mV in this example. The calculated input capacitance is 9.1μF. This example meets these two requirements with 2 × 10µF ceramic capacitors.

Equation 22. C I N > V O U T × I O U T × 1 - V O U T V I N m i n f S W × V I N m i n × V I N _ R I P P L E = 3.3 V × 12 A × 1 - 3.3 V 8 V 800   k H z × 8 V × 400 m V = 9.1 μ F

The capacitor must also have an RMS current rating greater than the maximum input RMS current in the application. Use Equation 24 to calculate the input RMS current the input capacitors must support. The result is 5.9A in this example. The ceramic input capacitors have a current rating greater than this value.

Equation 23. I C I N ( R M S ) = V O U T V I N m i n × V I N m i n - V O U T V I N m i n × I O U T 2 + I R I P P L E 2 12
Equation 24. I C I N ( R M S ) = 3.3 V 8 V × 8 V - 3.3 V 8 V × 12 2 + 3.6 2 12 = 5.9 A

For applications requiring bulk capacitance on the input, such as ones with low input voltage and high current, TI recommends the selection process in How to select input capacitors for a buck converter analog design journal.