SLVSI28 December   2025 TPS1HC04-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Thresholds
      2. 8.3.2  Accurate Current Sense
        1. 8.3.2.1 SNS Response Time
        2. 8.3.2.2 SNS Output Filter
        3. 8.3.2.3 Multiplexing of Current Sense Across Devices
      3. 8.3.3  Overcurrent Protection
        1. 8.3.3.1 Adjustable Current Limit
          1. 8.3.3.1.1 Current Limiting With Thermal Regulation
          2. 8.3.3.1.2 Current Limiting With No Thermal Regulation
          3. 8.3.3.1.3 Current Limit Foldback
          4. 8.3.3.1.4 Current Limit Accuracy
        2. 8.3.3.2 Thermal Shutdown
          1. 8.3.3.2.1 Relative Thermal Shutdown
          2. 8.3.3.2.2 Absolute Thermal Shutdown
      4. 8.3.4  Retry Protection Mechanism From Thermal Shutdown
      5. 8.3.5  Inductive-Load Switching-Off Clamp
      6. 8.3.6  Slower Slew Rate Option
      7. 8.3.7  Capacitive Load Charging
        1. 8.3.7.1 Adjustable Current Limiting for Inrush Control
        2. 8.3.7.2 Current Limit with Thermal Regulation for Capacitive Loads
        3. 8.3.7.3 Retry Thermal Shutdown Behavior for Capacitive Loads
        4. 8.3.7.4 Impact of DC Load on Capacitive Charging Capability
        5. 8.3.7.5 Device Capability
      8. 8.3.8  Bulb Charging
        1. 8.3.8.1 Non-Thermal Regulated Mode for Bulb Loads
        2. 8.3.8.2 Thermal Management During Bulb Inrush
        3. 8.3.8.3 Device Capability
      9. 8.3.9  Fault Detection and Reporting
        1. 8.3.9.1 Diagnostic Enable Function
        2. 8.3.9.2 FLT Reporting
        3. 8.3.9.3 FLT Timings
        4. 8.3.9.4 Fault Table
      10. 8.3.10 Full Diagnostics
        1. 8.3.10.1 Open-Load Detection
          1. 8.3.10.1.1 Channel On
          2. 8.3.10.1.2 Channel Off
        2. 8.3.10.2 Short-to-Battery Detection
        3. 8.3.10.3 Reverse-Polarity and Battery Protection
      11. 8.3.11 Full Protections
        1. 8.3.11.1 UVLO Protection
        2. 8.3.11.2 Loss of GND Protection
        3. 8.3.11.3 Loss of Power Supply Protection
        4. 8.3.11.4 Reverse Current Protection
        5. 8.3.11.5 Protection for MCU I/Os
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 EMC Transient Disturbances Test
      3. 9.2.3 Transient Thermal Performance
      4. 9.2.4 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Wettable Flank Package
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information
8.3.3.1.3 Current Limit Foldback

To protect the MOSFET from overcurrent at high VDS voltages the device offers a current limit foldback mechanism for higher current limit. If the VBB voltage is greater than VDET1 then the current limit folds back to 1/2 of current limit setting. If the VBB voltage is above VDET2, the current limit folds back 1/3 of current limit setting. Figure 6-21 shows device current limit foldback behavior across VBB voltage.