SLVSI28 December   2025 TPS1HC04-Q1

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 SNS Timing Characteristics
    7. 6.7 Switching Characteristics
    8. 6.8 Typical Characteristics
  8. 7 Parameter Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Input Voltage Thresholds
      2. 8.3.2  Accurate Current Sense
        1. 8.3.2.1 SNS Response Time
        2. 8.3.2.2 SNS Output Filter
        3. 8.3.2.3 Multiplexing of Current Sense Across Devices
      3. 8.3.3  Overcurrent Protection
        1. 8.3.3.1 Adjustable Current Limit
          1. 8.3.3.1.1 Current Limiting With Thermal Regulation
          2. 8.3.3.1.2 Current Limiting With No Thermal Regulation
          3. 8.3.3.1.3 Current Limit Foldback
          4. 8.3.3.1.4 Current Limit Accuracy
        2. 8.3.3.2 Thermal Shutdown
          1. 8.3.3.2.1 Relative Thermal Shutdown
          2. 8.3.3.2.2 Absolute Thermal Shutdown
      4. 8.3.4  Retry Protection Mechanism From Thermal Shutdown
      5. 8.3.5  Inductive-Load Switching-Off Clamp
      6. 8.3.6  Slower Slew Rate Option
      7. 8.3.7  Capacitive Load Charging
        1. 8.3.7.1 Adjustable Current Limiting for Inrush Control
        2. 8.3.7.2 Current Limit with Thermal Regulation for Capacitive Loads
        3. 8.3.7.3 Retry Thermal Shutdown Behavior for Capacitive Loads
        4. 8.3.7.4 Impact of DC Load on Capacitive Charging Capability
        5. 8.3.7.5 Device Capability
      8. 8.3.8  Bulb Charging
        1. 8.3.8.1 Non-Thermal Regulated Mode for Bulb Loads
        2. 8.3.8.2 Thermal Management During Bulb Inrush
        3. 8.3.8.3 Device Capability
      9. 8.3.9  Fault Detection and Reporting
        1. 8.3.9.1 Diagnostic Enable Function
        2. 8.3.9.2 FLT Reporting
        3. 8.3.9.3 FLT Timings
        4. 8.3.9.4 Fault Table
      10. 8.3.10 Full Diagnostics
        1. 8.3.10.1 Open-Load Detection
          1. 8.3.10.1.1 Channel On
          2. 8.3.10.1.2 Channel Off
        2. 8.3.10.2 Short-to-Battery Detection
        3. 8.3.10.3 Reverse-Polarity and Battery Protection
      11. 8.3.11 Full Protections
        1. 8.3.11.1 UVLO Protection
        2. 8.3.11.2 Loss of GND Protection
        3. 8.3.11.3 Loss of Power Supply Protection
        4. 8.3.11.4 Reverse Current Protection
        5. 8.3.11.5 Protection for MCU I/Os
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 EMC Transient Disturbances Test
      3. 9.2.3 Transient Thermal Performance
      4. 9.2.4 Application Curves
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
      2. 9.4.2 Layout Examples
        1. 9.4.2.1 Without a GND Network
        2. 9.4.2.2 With a GND Network
      3. 9.4.3 Wettable Flank Package
  11. 10Device and Documentation Support
    1. 10.1 Third-Party Products Disclaimer
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.4 Device Functional Modes

The device has several states to transition into based on the EN pin, DIAG_EN pin, and VBB voltage. The different states are referenced throughout the data sheet.

TPS1HC04-Q1 State DiagramFigure 8-44 State Diagram

OFF

Device OFF state and occurs when the VBB voltage of the device is below the VUVLOF.

SLEEP

This device state is entered from STANDBY state when the EN pin is pulled low for duration more than tSTBY amount of time and VBB is lower than VHV_F. Output is turned off. In the SLEEP state, all blocks inside the device are turned off and the current into the VBB is ISLEEP. From SLEEP, the device can transfer into the ACTIVE state if the EN pin is pulled high, the DIAGNOSTIC state if the DIAG_EN pin, without the EN pin, goes high, or the STANDBY state if VBB is greater than VHV_R.

STANDBY

The device STANDBY state is entered when the EN pin is low. Output is turned off and the DIAG_EN pin is also low but there has not yet been tSTBY amount of time. This state is included so that the device output can be modulated using PWM without any of the internal rails being cut off and put to SLEEP state. Once the device has waited tSTBY and VBB is less than VHV_F, the device completely shuts down and transitions into SLEEP state. However, if the time is less than tSTBY and the EN pin was to go high, the device transitions into ACTIVE state. Similarly if the DIAG_EN goes high, the device transitions into DIAGNOSTIC state.

DIAGNOSTIC

The device DIAGNOSTIC state is entered when EN is low and the DIAG_EN pin is high. Open-load or short-to-battery can be diagnosed in this state. The device signals a FLT and the SNS pin outputs ISNSFH current in either an open-load or short-to-battery fault condition.

ACTIVE

The device enters ACTIVE state when the output is on by pulling the EN pin high. In the ACTIVE state, the current limit value is set by the external resistor on the ILIM pin. If the DIAG_EN pin is pulled high while in the ACTIVE state, the SNS pin outputs a proportional current to the load current. Additionally the FLT pin reports if there is a fault occurring on any channel. The device can transition out of the ACTIVE state by turning off all of the channels while DIAG_EN is high or low. If the device turns off and DIAG_EN is high, the device transitions into the DIAGNOSTIC state. If the device turns off and the DIAG_EN pin is low, then the device transitions into the STANDBY state.

FAULT

The device FAULT state occurs when the EN pin is high but some event has caused the device to behave differently from normal operation. These fault events include: absolute thermal shutdown, relative thermal shutdown, current limit, open load and short to battery faults. Each of these fault events either directly or eventually shut off the FET to protect the device and system.