SLVSIH3 July   2025 TPS546B25W

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions
  6. 5 Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information
    5. 5.5 Electrical Characteristics
    6. 5.6 Typical Characteristics
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1  D-CAP4 Control
        1. 6.3.1.1 Loop Compensation
      2. 6.3.2  Internal VCC LDO and Using an External Bias on the VDRV Pin
      3. 6.3.3  Input Undervoltage Lockout (UVLO)
        1. 6.3.3.1 Fixed VCC_OK UVLO
        2. 6.3.3.2 Fixed VDRV UVLO
        3. 6.3.3.3 Programmable PVIN UVLO
        4. 6.3.3.4 Control (CNTL) Enable
      4. 6.3.4  Differential Remote Sense and Internal, External Feedback Divider
      5. 6.3.5  Set the Output Voltage and VORST#
      6. 6.3.6  Start-Up and Shutdown
      7. 6.3.7  Dynamic Voltage Slew Rate
      8. 6.3.8  Set Switching Frequency
      9. 6.3.9  Switching Node (SW)
      10. 6.3.10 Overcurrent Limit and Low-side Current Sense
      11. 6.3.11 Negative Overcurrent Limit
      12. 6.3.12 Zero-Crossing Detection
      13. 6.3.13 Input Overvoltage Protection
      14. 6.3.14 Output Overvoltage and Undervoltage Protection
      15. 6.3.15 Overtemperature Protection
      16. 6.3.16 Telemetry
    4. 6.4 Device Functional Modes
      1. 6.4.1 Forced Continuous-Conduction Mode
      2. 6.4.2 DCM Light Load Operation
      3. 6.4.3 Powering the Device From a 12V Bus
      4. 6.4.4 Powering the Device From a Split-rail Configuration
      5. 6.4.5 Pin-Strapping
        1. 6.4.5.1 Programming MSEL1
        2. 6.4.5.2 Programming PMB_ADDR
        3. 6.4.5.3 Programming MSEL2
        4. 6.4.5.4 Programming VSEL\FB
    5. 6.5 Programming
      1. 6.5.1 Supported PMBus® Commands
  8. 7 Register Maps
    1. 7.1  Conventions for Documenting Block Commands
    2. 7.2  (01h) OPERATION
    3. 7.3  (02h) ON_OFF_CONFIG
    4. 7.4  (03h) CLEAR_FAULTS
    5. 7.5  (04h) PHASE
    6. 7.6  (09h) P2_PLUS_WRITE
    7. 7.7  (0Ah) P2_PLUS_READ
    8. 7.8  (0Eh) PASSKEY
    9. 7.9  (10h) WRITE_PROTECT
    10. 7.10 (15h) STORE_USER_ALL
    11. 7.11 (16h) RESTORE_USER_ALL
    12. 7.12 (19h) CAPABILITY
    13. 7.13 (1Bh) SMBALERT_MASK
    14. 7.14 (20h) VOUT_MODE
    15. 7.15 (21h) VOUT_COMMAND
    16. 7.16 (22h) VOUT_TRIM
    17. 7.17 (24h) VOUT_MAX
    18. 7.18 (25h) VOUT_MARGIN_HIGH
    19. 7.19 (26h) VOUT_MARGIN_LOW
    20. 7.20 (27h) VOUT_TRANSITION_RATE
    21. 7.21 (29h) VOUT_SCALE_LOOP
    22. 7.22 (2Ah) VOUT_SCALE_MONITOR
    23. 7.23 (2Bh) VOUT_MIN
    24. 7.24 (33h) FREQUENCY_SWITCH
    25. 7.25 (35h) VIN_ON
    26. 7.26 (36h) VIN_OFF
    27. 7.27 (39h) IOUT_CAL_OFFSET
    28. 7.28 (40h) VOUT_OV_FAULT_LIMIT
    29. 7.29 (41h) VOUT_OV_FAULT_RESPONSE
    30. 7.30 (42h) VOUT_OV_WARN_LIMIT
    31. 7.31 (43h) VOUT_UV_WARN_LIMIT
    32. 7.32 (44h) VOUT_UV_FAULT_LIMIT
    33. 7.33 (45h) VOUT_UV_FAULT_RESPONSE
    34. 7.34 (46h) IOUT_OC_FAULT_LIMIT
    35. 7.35 (48h) IOUT_OC_LV_FAULT_LIMIT
    36. 7.36 (49h) IOUT_OC_LV_FAULT_RESPONSE
    37. 7.37 (4Ah) IOUT_OC_WARN_LIMIT
    38. 7.38 (4Fh) OT_FAULT_LIMIT
    39. 7.39 (50h) OT_FAULT_RESPONSE
    40. 7.40 (51h) OT_WARN_LIMIT
    41. 7.41 (55h) VIN_OV_FAULT_LIMIT
    42. 7.42 (60h) TON_DELAY
    43. 7.43 (61h) TON_RISE
    44. 7.44 (64h) TOFF_DELAY
    45. 7.45 (65h) TOFF_FALL
    46. 7.46 (78h) STATUS_BYTE
    47. 7.47 (79h) STATUS_WORD
    48. 7.48 (7Ah) STATUS_VOUT
    49. 7.49 (7Bh) STATUS_IOUT
    50. 7.50 (7Ch) STATUS_INPUT
    51. 7.51 (7Dh) STATUS_TEMPERATURE
    52. 7.52 (7Eh) STATUS_CML
    53. 7.53 (7Fh) STATUS_OTHER
    54. 7.54 (80h) STATUS_MFR_SPECIFIC
    55. 7.55 (88h) READ_VIN
    56. 7.56 (8Bh) READ_VOUT
    57. 7.57 (8Ch) READ_IOUT
    58. 7.58 (8Dh) READ_TEMPERATURE_1
    59. 7.59 (98h) PMBUS_REVISION
    60. 7.60 (99h) MFR_ID
    61. 7.61 (9Ah) MFR_MODEL
    62. 7.62 (9Bh) MFR_REVISION
    63. 7.63 (ADh) IC_DEVICE_ID
    64. 7.64 (AEh) IC_DEVICE_REV
    65. 7.65 (D1h) SYS_CFG_USER1
    66. 7.66 (D3h) PMBUS_ADDR
    67. 7.67 (D4h) COMP
    68. 7.68 (D5h) VBOOT_OFFSET_1
    69. 7.69 (D6h) STACK_CONFIG
    70. 7.70 (D8h) PIN_DETECT_OVERRIDE
    71. 7.71 (D9h) NVM_CHECKSUM
    72. 7.72 (DAh) READ_TELEMETRY
    73. 7.73 (DBh) STATUS_ALL
    74. 7.74 (DDh) EXT_WRITE_PROTECTION
    75. 7.75 (DEh) IMON_CAL
    76. 7.76 (FCh) FUSION_ID0
    77. 7.77 (FDh) FUSION_ID1
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Application
      2. 8.2.2 Design Requirements
      3. 8.2.3 Detailed Design Procedure
        1. 8.2.3.1 Input Capacitor Selection
        2. 8.2.3.2 Output Capacitor Selection
        3. 8.2.3.3 Compensation Selection
        4. 8.2.3.4 VOSNS and GOSNS Capacitor Selection
        5. 8.2.3.5 PMBus® Address Resistor Selection
      4. 8.2.4 Application Curves
    3. 8.3 Power Supply Recommendations
    4. 8.4 Layout
      1. 8.4.1 Layout Guidelines
      2. 8.4.2 Layout Example
        1. 8.4.2.1 Thermal Performance on EVM
  10. 9 Device and Documentation Support
    1. 9.1 Documentation Support
      1. 9.1.1 Related Documentation
    2. 9.2 Receiving Notification of Documentation Updates
    3. 9.3 Support Resources
    4. 9.4 Trademarks
    5. 9.5 Electrostatic Discharge Caution
    6. 9.6 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

7.66 (D3h) PMBUS_ADDR

CMD AddressD3h
Write Transaction:Write Word
Read Transaction:Read Word
Format:Unsigned Binary (2 bytes)
NVM Back-up:EEPROM
Updates:On-the-fly. (15h) STORE_USER_ALL then VCC reset required for device to respond to a new PMBus address.

This command contains bits for setting the PMBus address for the device and other configuration settings for the PMB_ADDR pin. Storing changes to this command value to NVM will change the PMBus Address of the device on future power-on cycles even if the PMB_ADDR bit in (D8h) PIN_DETECT_OVERRIDE is set to use Programming PMB_ADDR pin detection. All pin programmable addresses will be shifted by the change applied to the current pin-programmed PMBus addesss.

For example, if a device powers on with PMB_ADDR/VORST# connected to AGND with >1.78kΩ, selecting PMBus Address 14h and PMBUS_ADDR is changed to 18h and then stored to NVM, all PMBUS_ADDR values in Programming PMB_ADDR will be shifted by the same +04h shift in address. If the resistor from PMB_ADDR/VORST# to AGND is not changed, the part will operate at the programmed PMBus address, even if (D8h) PIN_DETECT_OVERRIDE was not changed to select PMB_ADDR based on NVM programming.

Care must be taken when making changes to this value and leaving pin detection of PMBus Address enabled as it can result in selecting reserved PMBus addresses that my conflict with the operation of the device.

Care must also be taken when setting this command value above 70h. If the updated PMBus Address would push the highest pin programmable PMBus address above address 7Fh, the pin programmable addresses will be clamped to limit the pin programmable address range to 70h - 7Fh.

Return to Supported PMBus Commands.

Figure 7-74 (D2h) MFR_SPECIFIC_D2 (PMBUS_ADDR) Register Map
15141312111098
RR/WR/WR/WR/WR/WR/WR/W
ReservedCOMMON_ADDR
76543210
R R R R/W R R R R/W
Reserved UNIQUE_ADDR
LEGEND: R/W = Read/Write; R = Read only
Table 7-78 Register Field Descriptions
BitFieldAccessResetDescription
15ReservedR0bNot used and always set to 0.
14:8COMMON_ADDRR/WNVMThe primary PMBus address of the part. After power-up restore, the value readback from this field shall be the address the device responds to. Refer to Programming PMB_ADDR for details on how pin-strapping affects this field.
7 Reserved R 0b Not used and always set to 0.
6:0UNIQUE_ADDRR/WNVMThe secondary (UNIQUE) PMBus address of the part. Primary devices do not support a unique address, and the field is set to the same value as the COMMON_ADDR.