SLVSJ01 June   2025 TXG8122-Q1

ADVANCE INFORMATION  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Pin Configuration and Functions—TXG8122-Q1
  6. 5 Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Electrical Characteristics
    5. 5.5  Supply Current Characteristics
    6. 5.6  Switching Characteristics, VCCA = 3.3 ± 0.3V
    7. 5.7  Switching Characteristics, VCCA = 5 ± 0.5V
    8. 5.8  Electrical Characteristics (85°C)
    9. 5.9  Supply Current Characteristics (85°C)
    10. 5.10 Switching Characteristics, VCCA = 3.3 ± 0.3V (85°C)
    11. 5.11 Switching Characteristics, VCCA = 5 ± 0.5V (85°C)
  7. 6 Detailed Description
    1. 6.1 Overview
    2. 6.2 Functional Block Diagram
    3. 6.3 Feature Description
      1. 6.3.1 Bidirectional Level Translation
    4. 6.4 Device Functional Modes
  8. 7 Application and Implementation
    1. 7.1 Application Information
    2. 7.2 Typical Application
      1. 7.2.1 Design Requirements
    3. 7.3 Power Supply Recommendations
    4. 7.4 Layout
      1. 7.4.1 Layout Guidelines
      2. 7.4.2 Layout Example
  9. 8 Device and Documentation Support
    1. 8.1 Device Support
      1. 8.1.1 Regulatory Requirements
    2. 8.2 Documentation Support
      1. 8.2.1 Related Documentation
    3. 8.3 Receiving Notification of Documentation Updates
    4. 8.4 Support Resources
    5. 8.5 Trademarks
    6. 8.6 Electrostatic Discharge Caution
    7. 8.7 Glossary
  10. 9 Revision History
  11. 10Mechanical, Packaging, and Orderable Information

5.10 Switching Characteristics, VCCA = 3.3 ± 0.3V (85°C)

over recommended operating conditions, unless otherwise noted
PARAMETER Test Conditions Supply Voltage Side 2 (VCC2) UNIT
2.5 ± 0.25V 3.3 ± 0.3V 5.0 ± 0.5V
MIN TYP MAX MIN TYP MAX MIN TYP MAX
tf1 Output signal fall time (SDA1, SCL1) 0.7 × VCC1 ≥ VO ≥ 0.3 × VCC1,
R1 = 300Ω, C1 = 80pF		 20 20 20 ns
0.9 × VCC1 ≥ VO ≥ 900mV,
R1 = 300Ω, C1 = 80pF		 35 35 35 ns
tf2 Output signal fall time (SDA2, SCL2) 0.7 × VCC2 ≥ VO ≥ 0.3 × VCC2,
R2 = 220Ω, C2 = 550pF		 56 24 32 ns
0.9 × VCC2 ≥ VO ≥ 400mV,
R2 = 220Ω, C2 = 550pF		 45 67 130 ns
tr1 Output signal rise time (SDA1, SCL1) 0.7 × VCC1 ≥ VO ≥ 0.3 × VCC1,
R1 = 300Ω, C1 = 80pF		 22 22 22 ns
tr2 Output signal rise time (SDA2, SCL2) 0.7 × VCC2 ≥ VO ≥ 0.3 × VCC2,
R2 = 220Ω, C2 = 550pF		 104 104 104 ns
tpLH1-2 Low-to-high propagation delay, side 1 to side 2 VI = 535mV, VO = 0.7 × VCC2, R1 = 300Ω, R2 = 220,
C1 = 80pF, C2 = 550pF		 205 205 204 ns
tpHL1-2 High-to-low propagation delay, side 1 to side 2 VI = 550mV, VO = 0.7 × VCC2,
R1 = 300Ω, R2 = 220,
C1 = 80pF, C2 = 550pF		 87 121 74 ns
tpLH2-1 Low-to-high propagation delay, side 2 to side 1 VI = 0.4 x VCC2, VO = 0.7 x VCC1,
R1 = 300Ω, R2 = 220,
C1 = 80pF, C2 = 550pF		 99 90 92 ns
tpHL2-1 High-to-low propagation delay, side 2 to side 1 VI = 0.4 x VCC2, VO = 0.3 × VCC1,
R1 = 300Ω, R2 = 220,
C1 = 80pF, C2 = 550pF		 107 98 90 ns
PWD1-2 Pulse width distortion |tpHL1-2 – tpLH1-2| R1 = 300Ω, R2 = 220,
C1 = 80pF, C2 = 550pF		 167 160 170 ns
PWD2-1 Pulse width distortion |tpHL2-1 – tpLH2-1| R1 = 300Ω, R2 = 220,
C1 = 80pF, C2 = 550pF		 35 22 27 ns
tLOOP1 Round-trip propagation delay on side
1		 0.4V ≤ VI ≤ 0.3 × VCC1,
R1 = 300Ω, C1 = 80pF,
R2 = 220Ω, C2 = 550pF		 189 189 194 ns