SNIS177C March   2013  – May 2025 LMT90

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Comparison
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  8. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 LMT90 Transfer Function
    4. 7.4 Device Functional Modes
  9. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Full-Range Centigrade Temperature Sensor
        1. 8.2.1.1 Design Requirements
        2. 8.2.1.2 Detailed Design Procedure
          1. 8.2.1.2.1 Capacitive Loads
        3. 8.2.1.3 Application Curve
    3. 8.3 System Examples
    4. 8.4 Power Supply Recommendations
    5. 8.5 Layout
      1. 8.5.1 Layout Guidelines
      2. 8.5.2 Layout Example
      3. 8.5.3 Thermal Considerations
  10. 9 Device and Documentation Support
    1.     Related Documentation
    2. 9.1 Receiving Notification of Documentation Updates
    3. 9.2 Support Resources
    4. 9.3 Trademarks
    5. 9.4 Electrostatic Discharge Caution
    6. 9.5 Glossary
  11. 10Revision History
  12. 11Mechanical, Packaging, and Orderable Information

6.4 Thermal Information

THERMAL METRIC(1) LMT90 UNIT
DBZ (SOT-23)
3 PINS
LEGACY CHIP NEW CHIP
RθJA Junction-to-ambient thermal resistance 450 240.6 °C/W
RθJC(top) Junction-to-case (top) thermal resistance - 144.5 °C/W
RθJB Junction-to-board thermal resistance - 72.3 °C/W
ψJT Junction-to-top characterization parameter - 28.7 °C/W
ψJB Junction-to-board characterization parameter - 71.7 °C/W
RθJC(bot) Junction-to-case (bottom) thermal resistance - - °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application note.