SNOS751F April   2000  – June 2026 LM6132 , LM6134

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information LM6132
    5. 5.5  Thermal Information LM6134
    6. 5.6  Electrical Characteristics: VS = 5V
    7. 5.7  Electrical Characteristics: VS = 2.7V
    8. 5.8  Electrical Characteristics: VS = 24V
    9. 5.9  Typical Characteristics
    10. 5.10 Old Versus New Die Comparison
  7. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Typical Applications
      1. 6.2.1 Three Op Amp Instrumentation Amp with Rail-to-Rail Input and Output
      2. 6.2.2 Flat Panel Display Buffering
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

7.4 Electrostatic Discharge Caution

LM6132 LM6134 This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.