SNOS751F April   2000  – June 2026 LM6132 , LM6134

PRODUCTION DATA  

  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1  Absolute Maximum Ratings
    2. 5.2  ESD Ratings
    3. 5.3  Recommended Operating Conditions
    4. 5.4  Thermal Information LM6132
    5. 5.5  Thermal Information LM6134
    6. 5.6  Electrical Characteristics: VS = 5V
    7. 5.7  Electrical Characteristics: VS = 2.7V
    8. 5.8  Electrical Characteristics: VS = 24V
    9. 5.9  Typical Characteristics
    10. 5.10 Old Versus New Die Comparison
  7. 6Application and Implementation
    1. 6.1 Application Information
    2. 6.2 Typical Applications
      1. 6.2.1 Three Op Amp Instrumentation Amp with Rail-to-Rail Input and Output
      2. 6.2.2 Flat Panel Display Buffering
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information

5.4 Thermal Information LM6132

THERMAL METRIC(1) LM6132 UNIT
D
(SOIC)		 P
(PDIP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 127.10 84.45 °C/W
RθJC(top) Junction-to-case (top) thermal resistance 63.27 58.07 °C/W
RθJB Junction-to-board thermal resistance 71.20 50.90 °C/W
ψJT Junction-to-top characterization parameter 13.91 30.43 °C/W
ψJB Junction-to-board characterization parameter 70.54 50.44 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.