SNOSDG7A May   2025  – March 2026 TPS7H6101-SEP

PRODUCTION DATA  

  1.   1
  2. 1 Features
  3. 2 Applications
  4. 3 Description
  5. 4 Device Options Table
  6. 5 Pin Configuration and Functions
  7. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Characteristics
  8. 7 Parameter Measurement Information
    1. 7.1 Timing Measurement
    2. 7.2 Deadtime Measurement Information
  9. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1  Gate Drive Input Voltage
      2. 8.3.2  Linear Regulator Operation
      3. 8.3.3  Bootstrap Operation
        1. 8.3.3.1 Bootstrap Charging Methods
          1. 8.3.3.1.1 Internal Bootstrap Charging
          2. 8.3.3.1.2 Direct VIN Bootstrap Charging
          3. 8.3.3.1.3 Dual Bootstrap Charging
          4. 8.3.3.1.4 Two Switch Common Ground Reference
        2. 8.3.3.2 Bootstrap Capacitor
        3. 8.3.3.3 Bootstrap Diode
        4. 8.3.3.4 Bootstrap Resistor
      4. 8.3.4  High-Side Driver Startup
      5. 8.3.5  PWM_LI and EN_HI
      6. 8.3.6  Dead Time
      7. 8.3.7  Input Interlock Protection
      8. 8.3.8  Undervoltage Lockout and Power Good (PGOOD)
      9. 8.3.9  Negative Switch Node Voltage Transients
      10. 8.3.10 Level Shifter
    4. 8.4 Device Functional Modes
  10. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
        1. 9.2.2.1 Bootstrap and Bypass Capacitor
          1. 9.2.2.1.1 Bootstrap Capacitor
          2. 9.2.2.1.2 Input Capacitance
          3. 9.2.2.1.3 Internal Regulator Capacitor
        2. 9.2.2.2 Bootstrap Diode
      3. 9.2.3 Application Results
      4. 9.2.4 Double Pulse Characteristics
        1. 9.2.4.1 Double Pulse Testing Measurement
        2. 9.2.4.2 Double Pulse Testing Results
      5. 9.2.5 Thermal Characteristics
        1. 9.2.5.1 Foster RC Thermal Model
        2. 9.2.5.2 Applying Foster Thermal Networks
    3. 9.3 Power Supply Recommendations
    4. 9.4 Layout
      1. 9.4.1 Layout Guidelines
        1. 9.4.1.1 Thermal Vias
        2. 9.4.1.2 HVIN Plane
        3. 9.4.1.3 Solder Mask Defined Pads
      2. 9.4.2 Layout Example
  11. 10Device and Documentation Support
    1. 10.1 Documentation Support
      1. 10.1.1 Related Documentation
    2. 10.2 Receiving Notification of Documentation Updates
    3. 10.3 Support Resources
    4. 10.4 Trademarks
    5. 10.5 Electrostatic Discharge Caution
    6. 10.6 Glossary
  12. 11Revision History
  13. 12Mechanical, Packaging, and Orderable Information

8.3.9 Negative Switch Node Voltage Transients

Though e-mode GaN FETs do not contain a body diode like silicon FETs, the devices are capable of reverse conduction due to the symmetrical device structure. During the reverse conduction periods, the source-drain voltage of the integrated GaN FET is typically 2.1V, which is higher than what is encountered with a traditional silicon FET. As such, the switch node pins of the driver (SW_HS and SW_LS are externally tied together and are collectively referred to as SW) have a negative voltage present. This negative transient can lead to an excessive bootstrap voltage, since BOOT is always referenced to SW. Furthermore, the printed circuit board layout and device parasitic inductances can further intensify the negative voltage transients. The recommended implementation of the bootstrap circuitry aids in reducing the likelihood of excessive negative BOOT to SW voltage. Operating at a bootstrap voltage above the absolute maximum of 14V can be detrimental to the gate driver, so care must be taken to verify that the maximum BOOT to SW voltage differential is not exceeded. Generally, BOOT follows SW instantaneously so that the BOOT to SW voltage does not overshoot significantly. However, to further increase assurance that excessive voltage is not present at the BOOT pin, an external Zener diode can be used between BOOT and SW to clamp the bootstrap voltage to acceptable values during operation.