TIDUF28 November 2023
| SUBSECTION | PARAMETER | SPECIFICATION |
|---|---|---|
| Input supply | DC-bus voltage | 320 V (TYP), 400 V (MAX) |
| Control supply voltage | 24 V ±20% (TYP), 60 V (MAX) | |
| Power switch | GaN-FET | LMG3422R030, bottom-side cooling |
| Slew rate | 30 V/ns (TYP), configurable, 100 V/ns (MAX) with this design. | |
| Overcurrent and overtemperature protection | LMG3422R030 integrated | |
| Fault reporting | Overcurrent, overtemperature, and UVLO fault feedback | |
| Temperature sensing (phase V) | Encoded: 9-kHz PWM at 3.3 V | |
| 3-phase complementary PWM | 8 kHz – 16 kHz (TYP), and higher, see section 3. | |
| PWM dead time | 150 ns (MCU), results effective 120 ns (TYP), can be lower, see Section 3. | |
| 3-phase output current (no heat sink) | 7.7 ARMS (TYP) at 27°C ambient, no heat sink | |
| Heat sink | None, but provision to add | |
| Phase current sense | Shunt | 1-mΩ shunt, 3 W |
| Isolated modulator | ±50 mV (linear input voltage range) | |
| Measurement range | ±50 A (linear range) | |
| DC bus voltage sense | Measurement range | 0 V to 480 V (linear range), configurable |
| Phase voltage sense | Measurement range | 0 V to 480 V, configurable |
| Isolation | None | MCU connected to DC–, hot side control |
| MCU interface | C2000 controlCARD | 180-pin HECC (5V supply and 3.3 V I/O) |
| MCU | 100-mil standard headers (3.3 V I/O) | |
| PCB | Layer stack | 6 layers, 70-μm copper |
| Clearance distances | 1. 6 mm (top and bottom layer), 0.6 mm (inner layers) | |
| PCB size | 148 mm × 116 mm (5826 mil × 4566 mil ) |