TIDUFC8 July 2025
Figure 3-5 shows the power stage of the bidirectional isolated dual-bridge series resonant DC/DC converter. The primary side consists of a 80V, 4.1mΩ, N-channel, NexFET™ power MOSFET CSD19502Q5B to block a DC voltage of 24V, and the secondary side consists of a 100V, 14.5mΩ, N-channel NexFET™ power MOSFET CSD19537Q3 to block DC voltage of 60V. There are two switches on each side of the primary and secondary sides to form a half-bridge, and the other set of bridge arms is composed of resonant capacitors.
The full bridges are connected with a high-frequency transformer with integrated leakage inductance (T1).