TIDUFD9 August   2025

 

  1.   1
  2.   Description
  3.   Resources
  4.   Features
  5.   Applications
  6.   6
  7. 1System Description
  8. 2System Overview
    1. 2.1 Block Diagram
    2. 2.2 Design Considerations
      1. 2.2.1 Half-Bridge Topology
      2. 2.2.2 Power Dissipation Design Consideration
      3. 2.2.3 HPA Drain Capacitor Bank Design
      4. 2.2.4 Gate and Drain Pulsing Considerations
      5. 2.2.5 Additional Considerations
    3. 2.3 Highlighted Products
      1. 2.3.1 AFE20408
      2. 2.3.2 LMG2100R026
  9. 3Hardware, Software, Testing Requirements, and Test Results
    1. 3.1 Hardware Requirements
    2. 3.2 Software Requirements
    3. 3.3 Test Setup
      1. 3.3.1 Initial Hardware Setup
      2. 3.3.2 Install HPA
    4. 3.4 Test Results
      1. 3.4.1 Bias Up and Down the HPA
      2. 3.4.2 HPA Drain Modulation
      3. 3.4.3 HPA Gate Modulation
  10. 4Design and Documentation Support
    1. 4.1 Design Files
      1. 4.1.1 Schematics
      2. 4.1.2 BOM
    2. 4.2 Tools and Software
    3. 4.3 Documentation Support
    4. 4.4 Support Resources
    5. 4.5 Trademarks

Description

High-power amplifiers (HPA) typically require proper biasing from a power controller in RF front-end transmitters to meet front-end power efficiency requirements. This reference design combines a TI HPA biasing controller with a TI GaN half-bridge power stage to demonstrate variable GaN HPA gate-biasing control along with GaN HPA gate or drain pulsing.