DRV3255-Q1

• AEC-Q100 Test Guidance for automotive applications:
  • Device ambient temperature grade 0: –40°C to +150°C
  • Device HBM ESD classification level 2
  • Device CDM ESD classification level C4B
• Functional Safety-Compliant targeted
  • Developed for functional safety applications
  • Documentation to aid ISO 26262 system design will be available upon production release
  • Systematic capability up to ASIL D targeted
• Three N-Channel half-bridge gate driver
  • 3.5-A/4.5-A max peak gate drive current
  • Power architecture optimized for 48-V applications
  • 12-V/48-V split supply architecture
  • 90-V MOSFET operating voltage range
  • Bootstrap with charge pump for 100% duty cycle
• Device configurations options
  • DRV3255-Q1: 3.5-A/4.5-A gate drive current
  • DRV3256-Q1 (Preview):2-A/2.5-A gate drive current and 3x current shunt amplifiers
• Integrated configurable Active Short Circuit (ASC) function
  • Low-side and High-side ASC support
  • Device pin control available
  • Fault handling capability
• Serial peripheral interface (SPI) with CRC
• Supports 3.3-V and 5-V logic inputs
• Advanced protection features
  • Battery voltage monitors
  • MOSFET V_DS overcurrent monitors
  • R_shunt overcurrent monitors
  • MOSFET V_GS gate fault monitors
  • Analog built in self test
  • Internal regulator and clock monitors
  • Device thermal warning and shutdown
  • Fault condition indicator pins

The DRV325x-Q1 family of devices are integrated three phase gate drivers for 48-V automotive motor drive applications. These devices are specifically designed to support high-power motor drive applications by providing 3.5-A peak source and 4.5-A peak sink gate drive currents, 90-V MOSFET transient over voltage support, and using a highly efficient bootstrap architecture that minimizes power losses and self-heating of the gate drivers. A charge pump allows for the gate drivers to support 100% PWM duty cycle control.

A wide range of diagnostics, monitoring, and protection features supports a robust motor drive system design. A highly configurable Active Short Circuit (ASC) function which enables selected external MOSFETs is integrated to achive the fast response to system faults and to eliminate the needs of external components.

Three low-side current shunt amplifiers are optionally provided (DRV3256-Q1) to support resistor based low-side current sensing.