LPV542 Nanopower, 480 nA, 1.6 V RRIO Dual, CMOS input op amp | TI.com

LPV542
This product has been released to the market and is available for purchase. For some products, newer alternatives may be available.
Nanopower, 480 nA, 1.6 V RRIO Dual, CMOS input op amp

 

Description

The LPV542 is an ultra-low-power, dual operational amplifier that provides 8kHz of bandwidth from 490nA of quiescent current making it well suited for battery-powered applications such as health and fitness wearables, building automation, and remote sensing nodes.

Each amplifier has a CMOS input stage with pico-amp bias currents which reduces errors commonly introduced in megaohm feedback resistance topologies such as photodiode and charge sense applications. In addition, the input common-mode range extends to the power supply rails and the output swings to within 3 mV of the rails, maintaining the widest dynamic range possible. Likewise, EMI protection is designed into the LPV542 in order to reduce system sensitivity to unwanted RF signals from mobile phones, WiFi, radio transmitters, and tag readers.

The LPV542 operates on a supply voltage as low as 1.6 V, ensuring continuous superior performance in low battery situations. The device is available in an 8-pad, low-profile, leadless 3 mm × 3 mm × 0.45 mm X1SON package and a standard 8 pin VSSOP.

Features

  • Wide Supply Range: 1.6 V to 5.5 V
  • Low Supply Current: 490 nA (typical/channel)
  • Good Offset Voltage: 3 mV (maximum/room)
  • Good TcVos: 1µV/°C (typical)
  • Gain-Bandwidth: 8 kHz (typical)
  • Rail-to-Rail Input and Output
  • Unity-Gain Stable
  • Low Input Bias Current : 1 pA (typ)
  • EMI Hardened
  • Temperature Range: –40°C to 125°C
  • Thin 3 mm × 3 mm × 0.45 mm X1SON package

Parametrics

Compare all products in General-purpose op amps Email Download to Excel
Part number Order Number of channels (#) Total supply voltage (Min) (+5V=5, +/-5V=10) Total supply voltage (Max) (+5V=5, +/-5V=10) GBW (Typ) (MHz) Slew rate (Typ) (V/us) Rail-to-rail Vos (offset voltage @ 25 C) (Max) (mV) Iq per channel (Typ) (mA) Vn at 1 kHz (Typ) (nV/rtHz) Rating Operating temperature range (C) Package Group Package size: mm2:W x L (PKG) Offset drift (Typ) (uV/C) Features Input bias current (Max) (pA) CMRR (Typ) (dB) Output current (Typ) (mA) Architecture
LPV542 Order now 2     1.6     5.5     0.008     0.0037     In
Out    
3     0.00048     250     Catalog     -40 to 125     VSSOP | 8
X1SON | 8    
8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)
8X1SON: 9 mm2: 3 x 3 (X1SON | 8)    
1     EMI Hardened     1     101     30      
LPV521 Order now 1     1.6     5.5     0.0062     0.0024     In
Out    
1     0.000351     255     Catalog     -40 to 125     SC70 | 5     5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)     0.4     EMI Hardened     1     102     22     CMOS    
TLV521 Order now 1     1.7     5.5     0.006     0.0029     In
Out    
3     0.00035     300     Catalog     -40 to 125     SC70 | 5     5SC70: 4 mm2: 2.1 x 2 (SC70 | 5)     1.5     Cost Optimized
EMI Hardened    
  100     12     CMOS    
TLV522 Order now 2     1.7     5.5     0.008     0.0037     In
Out    
4     0.0005     300     Catalog     -40 to 125     VSSOP | 8     8VSSOP: 15 mm2: 4.9 x 3 (VSSOP | 8)     1.5     Cost Optimized
EMI Hardened    
  90     5     CMOS