Product details

Number of channels (#) 1 Total supply voltage (Max) (+5V=5, +/-5V=10) 3.6 Total supply voltage (Min) (+5V=5, +/-5V=10) 1.7 Rail-to-rail In, Out GBW (Typ) (MHz) 0.008 Slew rate (Typ) (V/us) 0.0035 Vos (offset voltage @ 25 C) (Max) (mV) 3.1 Iq per channel (Typ) (mA) 0.00055 Vn at 1 kHz (Typ) (nV/rtHz) 264 Rating Catalog Operating temperature range (C) -40 to 125 Offset drift (Typ) (uV/C) 0.8 Features Cost Optimized, EMI Hardened CMRR (Typ) (dB) 80 Output current (Typ) (mA) 30 Architecture CMOS
Number of channels (#) 1 Total supply voltage (Max) (+5V=5, +/-5V=10) 3.6 Total supply voltage (Min) (+5V=5, +/-5V=10) 1.7 Rail-to-rail In, Out GBW (Typ) (MHz) 0.008 Slew rate (Typ) (V/us) 0.0035 Vos (offset voltage @ 25 C) (Max) (mV) 3.1 Iq per channel (Typ) (mA) 0.00055 Vn at 1 kHz (Typ) (nV/rtHz) 264 Rating Catalog Operating temperature range (C) -40 to 125 Offset drift (Typ) (uV/C) 0.8 Features Cost Optimized, EMI Hardened CMRR (Typ) (dB) 80 Output current (Typ) (mA) 30 Architecture CMOS
SOT-23 (DBV) 5 5 mm² 2.9 x 1.6
  • For Cost-Optimized Systems
  • Nanopower Supply Current: 500 nA per Channel
  • Offset Voltage: 3.1 mV (maximum)
  • TcVos: 0.8 µV/°C
  • Gain Bandwidth: 8 kHz
  • Unity-Gain Stable
  • Low Input-Bias Current: 100 fA
  • Wide Supply Range: 1.7 V to 3.6 V
  • Rail-to-Rail Input and Output (RRIO)
  • Temperature Range –40°C to +125°C
  • Industry Standard Package
    • Quad in 14-pin TSSOP and SOIC
    • Dual in 8-pin SOIC
    • Single in 5-pin SOT-23
  • Leadless Package
    • Dual in 8-Pin X2QFN
  • For Cost-Optimized Systems
  • Nanopower Supply Current: 500 nA per Channel
  • Offset Voltage: 3.1 mV (maximum)
  • TcVos: 0.8 µV/°C
  • Gain Bandwidth: 8 kHz
  • Unity-Gain Stable
  • Low Input-Bias Current: 100 fA
  • Wide Supply Range: 1.7 V to 3.6 V
  • Rail-to-Rail Input and Output (RRIO)
  • Temperature Range –40°C to +125°C
  • Industry Standard Package
    • Quad in 14-pin TSSOP and SOIC
    • Dual in 8-pin SOIC
    • Single in 5-pin SOT-23
  • Leadless Package
    • Dual in 8-Pin X2QFN

The TLV854x ultra-low-power operational amplifiers (op amps) are intended for cost-optimized sensing applications in wireless and low-power wired equipment. The TLV854x family of op amps minimize power consumption in equipment such as motion detecting security systems (like microwave and PIR motion sensing) where operational battery life is critical. They also have a carefully designed CMOS input stage, enabling very low, femto-ampere bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact sensitive applications. Examples of these include transimpedance amplifier (TIA) configurations with megaohm feedback resistors, and high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources such as mobile phones, WiFi, radio transmitters and tab readers.

The TLV854x op amps operates with a single supply voltage down to 1.7 V supply, providing continuous performance in low battery situations over the extended temperature range of –40°C to +125°C. All versions are specified for operation from –40°C to 125°C. The TLV8541 (single version) is available in the 5-pin SOT-23 while the TLV8542 (dual version) is available in the 8-pin SOIC package. The 4-channel TLV8544 (quad version) is available in the industry standard 14-pin TSSOP package.

The TLV854x ultra-low-power operational amplifiers (op amps) are intended for cost-optimized sensing applications in wireless and low-power wired equipment. The TLV854x family of op amps minimize power consumption in equipment such as motion detecting security systems (like microwave and PIR motion sensing) where operational battery life is critical. They also have a carefully designed CMOS input stage, enabling very low, femto-ampere bias currents, thereby reducing IBIAS and IOS errors that would otherwise impact sensitive applications. Examples of these include transimpedance amplifier (TIA) configurations with megaohm feedback resistors, and high source impedance sensing applications. Additionally, built-in EMI protection reduces sensitivity to unwanted RF signals from sources such as mobile phones, WiFi, radio transmitters and tab readers.

The TLV854x op amps operates with a single supply voltage down to 1.7 V supply, providing continuous performance in low battery situations over the extended temperature range of –40°C to +125°C. All versions are specified for operation from –40°C to 125°C. The TLV8541 (single version) is available in the 5-pin SOT-23 while the TLV8542 (dual version) is available in the 8-pin SOIC package. The 4-channel TLV8544 (quad version) is available in the industry standard 14-pin TSSOP package.

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Technical documentation

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Type Title Date
* Data sheet TLV854x 500-nA, RRIO, Nanopower Operational Amplifiers for Cost-Optimized Systems datasheet (Rev. E) 24 Apr 2018
Technical article What is an op amp? 21 Jan 2020
Application note GPIO Pins Power Signal Chain in Personal Electronics Running on Li-Ion Batteries 12 Feb 2018
Technical article How to lay out a PCB for high-performance, low-side current-sensing designs 06 Feb 2018
Technical article Low-side current sensing for high-performance cost-sensitive applications 22 Jan 2018
Application note Nano-Power Battery Monitoring in Personal Electronics 08 Dec 2017
Technical article How to make precision measurements on a nanopower budget, part 1: DC gain in nanopower op amps 06 Dec 2017

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

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SNOM627.TSC (54 KB) - TINA-TI Reference Design
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TLV8541 TINA-TI Spice Model

SNOM628.ZIP (15 KB) - TINA-TI Spice Model
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PSPICE-FOR-TI — PSpice® for TI design and simulation tool

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ANALOG-ENGINEER-CALC — Analog engineer's calculator

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Design tool

CIRCUIT060015 — Adjustable reference voltage circuit

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SOT-23 (DBV) 5 View options

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