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TS3DS26227

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3.3-V, 2:1 (SPDT), 2-channel differential signal switch with input logic translation

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Data sheet

TS3DS26227

ACTIVE
Data sheet Order now

Product details

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols MIPI Ron (typ) (Ω) 3.5 CON (typ) (pF) 10.5 ON-state leakage current (max) (µA) 0.03 Supply current (typ) (µA) 0.1 Bandwidth (MHz) 800 Operating temperature range (°C) -40 to 85 Features Break-before-make Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 2.5, 3.3 Protocols MIPI Ron (typ) (Ω) 3.5 CON (typ) (pF) 10.5 ON-state leakage current (max) (µA) 0.03 Supply current (typ) (µA) 0.1 Bandwidth (MHz) 800 Operating temperature range (°C) -40 to 85 Features Break-before-make Input/output continuous current (max) (mA) 64 Rating Catalog Drain supply voltage (max) (V) 3.6 Supply voltage (max) (V) 3.6
DSBGA (YZT) 12 3.9375 mm² 2.25 x 1.75
  • High-Bandwidth Data Paths – Up to 800 MHz
  • Specified Break-Before-Make Switching
  • Control Inputs Reference to VIO
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 2.3-V to 3.6-V Power Supply (V+)
  • 1.65-V to 1.95-V Logic Supply (VIO)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 4000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)
  • High-Bandwidth Data Paths – Up to 800 MHz
  • Specified Break-Before-Make Switching
  • Control Inputs Reference to VIO
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • 2.3-V to 3.6-V Power Supply (V+)
  • 1.65-V to 1.95-V Logic Supply (VIO)
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 4000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
    • 200-V Machine Model (A115-A)

The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.

The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.

The TS3DS26227 is a dual single-pole double-throw (SPDT) analog switch that is designed to operate from
2.3 V to 3.6 V. The device offers high-bandwidth data paths, and a break-before-make feature to prevent signal distortion during the transferring of a signal from one path to another. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable applications.

The TS3DS26227 has a separate logic supply pin (VIO) that operates from 1.65 V to 1.95 V. VIO powers the control circuitry, which allows the TS3DS26227 to be controlled by 1.8-V signals.
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Technical documentation

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Type Title Date
* Data sheet High-Bandwidth Dual SPDT Differential Signal Switch With Input Logic Translation datasheet (Rev. B) 20 Nov 2010
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

Design & development

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Simulation model

TS3DS26227 IBIS Model

SCEM513.ZIP (52 KB) - IBIS Model
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DSBGA (YZT) 12 View options
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