TS5N412

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10-V, 2:1 (SPDT), 4-channel general-purpose analog switch

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Product details

Parameters

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Package | Pins | Size

SSOP (DBQ) 16 29 mm² 4.9 x 6 TSSOP (PW) 16 22 mm² 4.4 x 5 open-in-new Find other Analog switches & muxes

Features

  • Low and Flat ON-State Resistance (ron) Characteristics Over Operating Range (ron = 3 Typ)
  • 0- to 10-V Switching on Data I/O Ports
  • Bidirectional Data Flow With Near-Zero Propagation Delay
  • Low Input/Output Capacitance Minimizes Loading and Signal Distortion (Cio(OFF) = 20 pF Max, B Port)
  • VCC Operating Range From 4.75 V to 5.25 V
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications
  • APPLICATIONS
    • PCI Interface
    • Differential Signal Interface
    • Memory Interleaving
    • Bus Isolation
    • Low-Distortion Signal Gating

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Description

The TS5N412 is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the TS5N412 provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.

The TS5N412 is a 4-bit 1-of-2 multiplexer/demultiplexer with a single output-enable (OE) input. The select (S) inputs control the data path of the multiplexer/demultiplexer. When OE is low, the multiplexer/demultiplexer is enabled and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the multiplexer/demultiplexer is disabled and a high-impedance state exists between the A and B ports.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

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Technical documentation

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Type Title Date
* Data sheet TS5N412 datasheet Jul. 28, 2005
Application note Multiplexers and Signal Switches Glossary (Rev. A) Jun. 09, 2021
Application note Selecting the Right Texas Instruments Signal Switch (Rev. B) Apr. 02, 2020
Application note Preventing Excess Power Consumption on Analog Switches Jul. 03, 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection Jul. 08, 2004

Design & development

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Hardware development

INTERFACE ADAPTER Download
document-generic User guide
10
Description

The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages.  The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.     

Features
  • Quick testing of TI's leaded surface mount packages 
  • Allows leaded suface mount packages to be plugged into 100mil spaced bread board 
  • Supports TI's 8 most popular leaded packages with a single panel


CAD/CAE symbols

Package Pins Download
SSOP (DBQ) 16 View options
TSSOP (PW) 16 View options

Ordering & quality

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  • Ongoing reliability monitoring

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