Top

Product details

Parameters

Applications SDIO, MMC, SD Card Bits (#) 4 High input voltage (Min) (Vih) 0.9 High input voltage (Max) (Vih) 3.6 Vout (Min) (V) 0.88 Output voltage (Min) (V) 0.88 Output voltage (Max) (V) 3.6 Data rate (Max) (Mbps) 60 IOH (Max) (mA) -0.02 IOL (Max) (mA) 0.02 Features EMI filtering, Edge rate accelerator Rating Catalog open-in-new Find other Application-specific voltage translators

Package | Pins | Size

DSBGA (YFP) 20 4 mm² 1.598 x 1.998 open-in-new Find other Application-specific voltage translators

Features

  • Level Translator
    • VCCA Range of 1.1 V to 3.6 V
    • Fast Propagation Delay (4 ns Max When
      Translating Between 1.8 V and 2.9 V)
  • Low-Dropout (LDO) Regulator
    • 200-mA LDO Regulator With Enable
    • 2.9-V Output Voltage
    • 3.05-V to 5.5-V Input Voltage Range
    • Very Low Dropout: 200 mV at 200 mA
  • ESD Protection Exceeds JESD 22 (A Port)
    • 2000-V Human-Body Model (A114-B)
    • 1000-V Charged-Device Model (C101)
  • ±8-kV Contact Discharge IEC 61000-4-2 ESD (B Port)

All other trademarks are the property of their respective owners.

open-in-new Find other Application-specific voltage translators

Description

The TXS0206-29 is a complete solution for interfacing microprocessors with MultiMediaCards (MMCs), secure digital (SD) cards, and Memory Stick™ cards. It is comprised of a high-speed level translator, a low-dropout (LDO) voltage regulator, IEC level ESD protection, and EMI filtering circuitry.

The voltage-level translator has two supply voltage pins. VCCA can be operated over the full range of 1.1 V to 3.6 V. VCCB is set at 2.9 V and is supplied by an internal LDO. The integrated LDO accepts input voltages from 3.05 V to as high as 5.5 V and outputs 2.9 V, 200 mA to the B-side circuitry and to the external memory card. The TXS0206-29 enables system designers to easily interface low-voltage microprocessors to memory cards operating at 2.9 V.

Memory card standards recommend high-ESD protection for devices that connect directly to the external memory card. To meet this need, the TXS0206-29 incorporates ±8-kV Contact Discharge protection on the card side.

Since memory cards are widely used in mobile phones, PDAs, digital cameras, personal media players, camcorders, set-top boxes, etc. Low static power consumption and small package size make the TXS0206-29 an ideal choice for these applications. The TXS0206-29 is offered in a 20-bump wafer chip scale package (WCSP). This package has dimensions of 1.96 mm × 1.56 mm, with a 0.4-mm ball pitch for effective board-space savings.

open-in-new Find other Application-specific voltage translators
Download

Technical documentation

star = Top documentation for this product selected by TI
No results found. Please clear your search and try again.
View all 3
Type Title Date
* Data sheet TXS0206-29 MMC, SD Card, Memory Stick(TM) Voltage-Translation Transceiver datasheet Dec. 02, 2009
Selection guide Voltage Translation Buying Guide (Rev. A) Apr. 15, 2021
Application note Translate Voltages for SDIO Oct. 20, 2020

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Design tools & simulation

SIMULATION MODEL Download
SCEM564.ZIP (139 KB) - IBIS Model

CAD/CAE symbols

Package Pins Download
DSBGA (YFP) 20 View options

Ordering & quality

Information included:
  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring

Support & training

TI E2E™ forums with technical support from TI engineers

Content is provided "as is" by TI and community contributors and does not constitute TI specifications. See terms of use.

If you have questions about quality, packaging or ordering TI products, see TI support. ​​​​​​​​​​​​​​

Videos