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DRV8762-Q1

AKTIV

Halbbrücken-Gate-Treiber für die Automobilindustrie, 85 V

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Datenblatt

DRV8762-Q1

AKTIV
Datenblatt Jetzt bestellen

Produktdetails

Rating Automotive TI functional safety category Functional Safety-Compliant Operating temperature range (°C) to
Rating Automotive TI functional safety category Functional Safety-Compliant Operating temperature range (°C) to
VQFN (RGZ) 48 49 mm² 7 x 7
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • H-bridge gate driver
    • Drives four N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 8-level configurable peak gate drive current up to 224 / 448mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 4x and 2x PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin
  • AEC-Q100 Test Guidance for automotive applications
    • Device ambient temperature: –40°C to +125°C
  • H-bridge gate driver
    • Drives four N-channel MOSFETs (NMOS)
    • 8 to 85V wide operating voltage range
    • Bootstrap architecture for high-side gate driver
    • Supports 50mA average gate switching current enables driving 400nC MOSFETs at 20kHz
    • Trickle charge pump to support 100% PWM duty cycle and to generate overdrive supply to drive external cut-off or reverse polarity protection circuit
  • Smart Gate Drive architecture
    • 8-level configurable peak gate drive current up to 224 / 448mA (source / sink)
    • Closed-loop automatic deadtime insertion based on gate-source voltage monitoring
    • Configurable soft shutdown to minimize inductive voltage spikes during overcurrent shutdown
  • Low-side Current Sense Amplifier
    • 1mV low input offset across temperature
    • 4-level adjustable gain
    • Adjustable output bias to support unidirectional or bidirectional sensing
  • SPI-based detailed configuration and diagnostics
  • DRVOFF pin to disable driver independently
  • High voltage wake up pin (nSLEEP)
  • Dedicated ASCIN pin to control motor braking (active short circuit)
  • 4x and 2x PWM Modes
  • Supports 3.3V and 5V Logic Inputs
  • Protection features
    • Battery and power supply voltage monitors
    • MOSFET VDS and Rsense over current monitors
    • MOSFET VGS gate fault monitors
    • Device thermal warning and shutdown
    • Fault condition indicator pin

The DRV8762-Q1 is an integrated smart gate driver for 48V automotive H-bridge applications. The device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8762-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 224mA source and 448mA sink. The DRV8762-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8762-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8762-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.

The DRV8762-Q1 is an integrated smart gate driver for 48V automotive H-bridge applications. The device provides two half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8762-Q1 generates the correct gate drive voltages using an external 12V supply and an integrated bootstrap diode for the high-side MOSFETs. The Smart Gate Drive architecture supports configurable peak gate drive current from 16mA up to 224mA source and 448mA sink. The DRV8762-Q1 can operate with a wide input range from 8V to 85V at the motor connection. A trickle charge pump allows for the gate drivers to support 100% PWM duty cycle control and provides overdrive gate drive voltage of external switches.

The DRV8762-Q1 provides low-side current sense amplifiers to support resistor based low-side current sensing. The low offset of the amplifiers enables the system to obtain precise motor current measurements.

A wide range of diagnostics and protection features are integrated with the DRV8762-Q1 enables a robust motor drive system design and helps eliminate the need of external components. The highly configurable device response allows the device to be integrated seamlessly into a variety of system designs.
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Technische Dokumentation

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* Data sheet DRV8762-Q1 48V Battery H-Bridge Smart Gate Driver with Accurate Current Sensing and Advanced Monitoring datasheet PDF | HTML 14 Mai 2026
EVM User's guide DRV8762-Q1 Evaluation Module PDF | HTML 06 Apr 2026

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Evaluierungsplatine

DRV8762-Q1EVM — DRV8762-Q1 – Evaluierungsmodul

Der DRV8762-Q1 ist ein integrierter intelligenter Gate-Treiber für H-Brücken-Gleichstrom-Bürstenanwendungen (Brushed DC, BDC) mit 48 V in der Automobilindustrie. Der Baustein bietet Low-Side-Strommessverstärker zur Unterstützung widerstandsbasierter Low-Side-Strommessung. Der niedrige Offset der (...)

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