Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) -40 to 125 |
| Gehäusemenge | Träger 3.000 | LARGE T&R |
Merkmale von LM2005
- Drives two N-channel MOSFETs in half-bridge configuration
- Integrated bootstrap diode
- 8-V typical undervoltage lockout on GVDD
- 107-V absolute maximum voltage on BST
- –19.5-V absolute maximum negative transient voltage handling on SH
- 0.5-A/0.8-A peak source/sink currents
- 115-ns typical propagation delay
Beschreibung von LM2005
The LM2005 is a compact, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The integrated bootstrap diode saves board space and reduces system cost by eliminating the need for an external discrete diode.
The –1-V DC and –19.5-V transient negative voltage handling on the SH pin improve the system robustness in high noise applications. The small, thermally-enhanced 8-pin WSON package improves PCB layout by allowing the driver to be placed closer to the motor phases. The LM2005 is also available in an 8-pin SOIC package compatible with industry standard pinouts. Undervoltage lockout (UVLO) is provided on both the low-side and the high-side power rails for protection during power up and power down.