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UCC27200A

AKTIV

Halbbrücken-Gate-Treiber, 120 V, 3 A, mit 8 V UVLO, negativer Spannungsbehandlung und CMOS-Eingängen

Produktdetails

Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -18 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Noninverting
Bootstrap supply voltage (max) (V) 120 Power switch MOSFET Input supply voltage (min) (V) 8 Input supply voltage (max) (V) 17 Peak output current (A) 3 Operating temperature range (°C) -40 to 150 Undervoltage lockout (typ) (V) 8 Rating Catalog Propagation delay time (µs) 0.02 Rise time (ns) 8 Fall time (ns) 7 Iq (mA) 0.001 Input threshold CMOS Channel input logic CMOS Switch node voltage (V) -18 Features Integrated bootstrap diode, Negative Voltage Handling on Input Driver configuration Noninverting
VSON (DRC) 9 9 mm² (3 mm × 3 mm) SOIC (D) 8 29.4 mm² (4.9 mm × 6 mm) HSOIC (DDA) 8 29.4 mm² (4.9 mm × 6 mm) VSON (DRM) 8 16 mm² (4 mm × 4 mm)
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Negative voltage handling on HS (–18V)
  • Maximum boot voltage 120V
  • Maximum VDD voltage 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise/7ns fall time with 1000pF load
  • 1ns delay matching
  • Undervoltage lockout for high-side and low-side driver
  • Specified from –40°C to 150°C
  • Drives two N-channel MOSFETs in high-side and low-side configuration
  • Negative voltage handling on HS (–18V)
  • Maximum boot voltage 120V
  • Maximum VDD voltage 20V
  • On-chip 0.65V VF, 0.65Ω RD bootstrap diode
  • 22ns propagation delay times
  • 3A sink, 3A source output currents
  • 8ns rise/7ns fall time with 1000pF load
  • 1ns delay matching
  • Undervoltage lockout for high-side and low-side driver
  • Specified from –40°C to 150°C

The UCC2720xA family of high-frequency N-channel MOSFET drivers include a 120V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turn-on and turn-off of each other. In order to improve performance in noisy power supply environments the UCC2720xA has an enhanced ESD input structure and also has the ability to withstand a maximum of –18V on its HS pin.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

Two versions of the UCC2720xA are offered. The UCC27200A has high-noise immune CMOS input thresholds while the UCC27201A has TTL-compatible thresholds.

The UCC2720xA family of high-frequency N-channel MOSFET drivers include a 120V bootstrap diode and high-side/low-side driver with independent inputs for maximum control flexibility. This allows for N-channel MOSFET control in half-bridge, full-bridge, two-switch forward and active clamp forward converters. The low-side and the high-side gate drivers are independently controlled and matched to 1ns between the turn-on and turn-off of each other. In order to improve performance in noisy power supply environments the UCC2720xA has an enhanced ESD input structure and also has the ability to withstand a maximum of –18V on its HS pin.

An on-chip bootstrap diode eliminates the external discrete diodes. Under-voltage lockout is provided for both the high-side and the low-side drivers forcing the outputs low if the drive voltage is below the specified threshold.

Two versions of the UCC2720xA are offered. The UCC27200A has high-noise immune CMOS input thresholds while the UCC27201A has TTL-compatible thresholds.

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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC2720xA 120V, 3A/3A Half-Bridge Drivers with 8V UVLO datasheet (Rev. C) PDF | HTML 18.07.2024
Product overview UCC272xx and UCC273xx: 120V Half-Bridge Gate Drivers for High-Powered Applications (Rev. A) PDF | HTML 02.03.2026
Anwendungshinweis Mapping Application Requirements with the 120V Halfbridge Gate Driver (Rev. A) PDF | HTML 27.02.2026
Anwendungshinweis Using Half-Bridge Gate Driver to Achieve 100% Duty Cycle for High Side FET PDF | HTML 25.03.2024
Anwendungshinweis Challenges and Solutions for Half-Bridge Gate Drivers in Bidirectional DC-DC Converters PDF | HTML 24.01.2024
Anwendungshinweis Bootstrap Circuitry Selection for Half Bridge Configurations (Rev. A) PDF | HTML 08.09.2023
Anwendungshinweis Comparative Analysis of Two Different Methods for Gate-Drive Current Boosting (Rev. A) PDF | HTML 17.02.2022
Anwendungshinweis Voltage Fed Full Bridge DC-DC & DC-AC Converter High-Freq Inverter Using C2000 (Rev. D) 07.04.2021
Anwendungshinweis Implementing High-Side Switches Using Half-Bridge Gate Drivers for 48-V Battery. 12.05.2020
Application brief External Gate Resistor Selection Guide (Rev. A) 28.02.2020
Application brief Understanding Peak IOH and IOL Currents (Rev. A) 28.02.2020
Application brief Small Price Competitive 100-V Driver for 48-V BLDC Motor Drives 22.10.2019
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Anwendungshinweis UCC27282 Improving motor drive system robustness 11.01.2019
Weitere Dokumente Fundamentals of MOSFET and IGBT Gate Driver Circuits (Replaces SLUP169) (Rev. A) 29.10.2018
Auswahlhilfe Power Management Guide 2018 (Rev. R) 25.06.2018

Design und Entwicklung

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