Gehäuseinformationen
| Gehäuse | Pins SOIC (DW) | 24 |
| Betriebstemperaturbereich (°C) -40 to 85 |
| Gehäusemenge | Träger 25 | TUBE |
Merkmale von SN74ABT863
- State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
- Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
- High-Impedance State During Power Up and Power Down
- High-Drive Outputs (-32-mA IOH, 64-mA IOL)
- Latch-Up Performance Exceeds 500 mA Per JESD 17
- ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
- Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs
EPIC-IIB is a trademark of Texas Instruments Incorporated.
Beschreibung von SN74ABT863
The 'ABT863 devices are 9-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.
These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.
The outputs are in the high-impedance state during power up and power down. The outputs remain in the high-impedance state while the device is powered down.
When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
The SN54ABT863 is characterized for operation over the full military temperature range of -55°C to 125°C.
The SN74ABT863 is characterized for operation from -40°C to 85°C.