Produktdetails

Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 9 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
Supply voltage (min) (V) 4.5 Supply voltage (max) (V) 5.5 Number of channels 9 IOL (max) (mA) 64 IOH (max) (mA) -32 Input type TTL Output type TTL Features Over-voltage tolerant inputs, Partial power down (Ioff), Power up 3-state, Very high speed (tpd 5-10ns) Technology family ABT Rating Catalog Operating temperature range (°C) -40 to 85
SOIC (DW) 24 159.65 mm² 15.5 x 10.3
  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JESD 17
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs
  • EPIC-IIB is a trademark of Texas Instruments Incorporated.

  • State-of-the-Art EPIC-II BTM BiCMOS Design Significantly Reduces Power Dissipation
  • Typical VOLP (Output Ground Bounce) < 1 V at VCC = 5 V, TA = 25°C
  • High-Impedance State During Power Up and Power Down
  • High-Drive Outputs (-32-mA IOH, 64-mA IOL)
  • Latch-Up Performance Exceeds 500 mA Per JESD 17
  • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)
  • Package Options Include Plastic Small-Outline (DW), Shrink Small-Outline (DB) Packages, and Thin Shrink Small-Outline (PW), Ceramic Chip Carriers (FK), Plastic (NT), and Ceramic (JT) DIPs
  • EPIC-IIB is a trademark of Texas Instruments Incorporated.

The 'ABT863 devices are 9-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.

These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.

The outputs are in the high-impedance state during power up and power down. The outputs remain in the high-impedance state while the device is powered down.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT863 is characterized for operation over the full military temperature range of -55°C to 125°C.
The SN74ABT863 is characterized for operation from -40°C to 85°C.

The 'ABT863 devices are 9-bit transceivers designed for asynchronous communication between data buses. The control-function implementation allows for maximum flexibility in timing.

These devices allow noninverted data transmission from the A bus to the B bus or from the B bus to the A bus, depending on the logic levels at the output-enable (OEAB\ and OEBA\) inputs.

The outputs are in the high-impedance state during power up and power down. The outputs remain in the high-impedance state while the device is powered down.

When VCC is between 0 and 2.1 V, the device is in the high-impedance state during power up or power down. However, to ensure the high-impedance state above 2.1 V, OE\ should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

The SN54ABT863 is characterized for operation over the full military temperature range of -55°C to 125°C.
The SN74ABT863 is characterized for operation from -40°C to 85°C.

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Technische Dokumentation

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Typ Titel Datum
* Data sheet 9-Bit Bus Transceivers With 3-State Outputs datasheet (Rev. E) 10 Jul 1998
Application note Implications of Slow or Floating CMOS Inputs (Rev. E) 26 Jul 2021
Selection guide Logic Guide (Rev. AB) 12 Jun 2017
Application note Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) 02 Dez 2015
User guide LOGIC Pocket Data Book (Rev. B) 16 Jan 2007
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004
Application note Selecting the Right Level Translation Solution (Rev. A) 22 Jun 2004
Application note Quad Flatpack No-Lead Logic Packages (Rev. D) 16 Feb 2004
Application note TI IBIS File Creation, Validation, and Distribution Processes 29 Aug 2002
Application note Power-Up 3-State (PU3S) Circuits in TI Standard Logic Devices 10 Mai 2002
Selection guide Advanced Bus Interface Logic Selection Guide 09 Jan 2001
Application note Bus-Interface Devices With Output-Damping Resistors Or Reduced-Drive Outputs (Rev. A) 01 Aug 1997
Application note Advanced BiCMOS Technology (ABT) Logic Characterization Information (Rev. B) 01 Jun 1997
Application note Designing With Logic (Rev. C) 01 Jun 1997
Application note Advanced BiCMOS Technology (ABT) Logic Enables Optimal System Design (Rev. A) 01 Mär 1997
Application note Family of Curves Demonstrating Output Skews for Advanced BiCMOS Devices (Rev. A) 01 Dez 1996
Application note Input and Output Characteristics of Digital Integrated Circuits 01 Okt 1996
Application note Live Insertion 01 Okt 1996
Application note Understanding Advanced Bus-Interface Products Design Guide 01 Mai 1996

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