Gehäuseinformationen
| Gehäuse | Pins SOIC (D) | 8 |
| Betriebstemperaturbereich (°C) -55 to 125 |
| Gehäusemenge | Träger 75 | TUBE |
Merkmale von TLE2022AM
- Supply current: 300µA, max
- High unity-gain bandwidth: 2MHz
- High slew rate: 0.65V/µs
- Specified for both 5V single-supply and ±15V operation
- Phase-reversal protection
- High open-loop gain: 6.5V/µV (136dB)
- Low offset voltage: 100µV, max
- Low input bias current: 50nA, max
- Low noise voltage: 19nV/√Hz
Beschreibung von TLE2022AM
The TLE2021, TLE2022, and TLE2024 (TLE202x) devices are precision, high-speed, low-power operational amplifiers using a new Texas Instruments state-of-the art bipolar process. These devices combine the best features of the OP21, with a highly improved slew rate and unity-gain bandwidth.
The complementary bipolar process uses isolated vertical pnp transistors that yield dramatic improvement in unity-gain bandwidth and slew rate over similar devices.
The addition of a bias circuit in conjunction with this process results in extremely stable parameters with both time and temperature. Therefore, a precision device remains a precision device even with changes in temperature and over years of use.
This combination of excellent dc performance with a common-mode input voltage range that includes the negative rail makes these devices an excellent choice for low-level signal conditioning applications in either single-supply or split-supply configurations. In addition, these devices offer phase-reversal protection circuitry that eliminates an unexpected change in output states when one of the inputs is less than the negative supply rail.
A variety of available options includes small-outline and chip-carrier versions for high-density systems applications.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from –40°C to +85°C. The M-suffix devices are characterized for operation over the full military temperature range of –55°C to +125°C.