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UCC21550

AKTIV

Reinforced, 4A/6A dual-channel isolated gate driver w/ disable, programmable deadtime

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Datenblatt

UCC21550

AKTIV
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Produktdetails

Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 7070 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
Number of channels 2 Isolation rating Reinforced Power switch IGBT, MOSFET, SiCFET Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1500 Transient isolation voltage (VIOTM) (VPK) 7070 Peak output current (A) 6 Peak output current (source) (typ) (A) 4 Peak output current (sink) (typ) (A) 6 Features Disable, High CMTI, Programmable dead time Output VCC/VDD (min) (V) 13 Output VCC/VDD (max) (V) 25 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 Input threshold CMOS, TTL Operating temperature range (°C) -40 to 150 Rating Catalog Fall time (ns) 8 Undervoltage lockout (typ) (V) 5, 8, 12 TI functional safety category Functional Safety-Capable
SOIC (DW) 16 106.09 mm² (10.3 mm × 10.3 mm) SOIC (DWK) 14 106.09 mm² (10.3 mm × 10.3 mm)

  • Universal: dual low-side, dual high-side or halfbridge driver

  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

  • Universal: dual low-side, dual high-side or halfbridge driver

  • Junction temperature range –40 to +150°C
  • Up to 4A peak source and 6A peak sink output
  • Common-mode transient immunity (CMTI) greater than 125V/ns
  • Up to 25V VDD output drive supply
    • 5V,8V,12V VDD UVLO options
  • Switching parameters:
    • 33ns typical propagation delay
    • 5ns maximum pulse-width distortion
    • 10µs maximum VDD power-up delay
  • UVLO protection for all power supplies
  • Fast disable for power sequencing

The UCC21550 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21550 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21550 device enables high efficiency, high power density, and robustness in a wide variety of power applications.

The UCC21550 is an isolated dual channel gate driver family with programmable dead time and wide temperature range. It is designed with 4A peak-source and 6A peak-sink current to drive power MOSFET, SiC, GaN, and IGBT transistors.

The UCC21550 can be configured as two low-side drivers, two high-side drivers, or a half-bridge driver. The input side is isolated from the two output drivers by a 5kVRMS isolation barrier, with a minimum of 125V/ns common-mode transient immunity (CMTI).

Protection features include: resistor programmable dead time, disable feature to shut down both outputs simultaneously, and integrated de-glitch filter that rejects input transients shorter than 5ns. All supplies have UVLO protection.

With all these advanced features, the UCC21550 device enables high efficiency, high power density, and robustness in a wide variety of power applications.
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Technische Dokumentation

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Top-Dokumentation Typ Titel Format-Optionen Neueste englische Version herunterladen Datum
* Datenblatt UCC21550x 4A, 6A, Reinforced Isolation Dual-Channel Gate Driver datasheet (Rev. C) PDF | HTML 09.08.2024
Zertifikat VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. AB) 15.07.2026
Zertifikat FPPT2 - Nonoptical Isolating Devices UL 1577 Certificate of Compliance. 19.05.2025
Zertifikat CQC Certificate for UCC21551xx 27.08.2024

Design und Entwicklung

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Evaluierungsplatine

UCC21520EVM-286 — UCC21520 4A/6A isolierter Zweikanal-Gate-Treiber – Evaluierungsmodul

Das UCC21520EVM-286 ist für die Evaluierung des UCC21520DW ausgelegt, eines isolierten Gate-Treibers mit zwei Kanälen sowie einer 4-A-Quell- und 6-A-Senk-Spitzenstrombelastbarkeit. Dieses EVM dient als Referenzdesign zur Ansteuerung von Leistungs-MOSFETs, IGBTs und SiC-MOSFETs mit Identifikation (...)

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