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The BUF12840 offers 12 programmable gamma channels with external electrically erasable programmable read-only memory (EEPROM) read capabilities.
The BUF12840 has two separate memory banks that allow simultaneous storage of two different gamma curves to facilitate switching between gamma curves.
All gamma channels offer a rail-to-rail output that typically swings to within 200mV of either supply rail with a 5mA load. All channels are programmed using a two-wire interface that supports standard operations up to 400kHz and high-speed data transfers up to 3.4MHz.
The BUF12840 is manufactured using Texas Instruments’ proprietary, state-of-the-art, high-voltage CMOS process. This process offers very dense logic and high supply voltage operation of up to 20V. The BUF12840 is offered in a QFN-24 package, and is specified from –40°C to +95°C.
| Documentación principal | Tipo | Título | Opciones de formato | Descargar la versión más reciente en inglés | Fecha |
|---|---|---|---|---|---|
| * | Hoja de datos | Prog Gamma-Voltage Generator w/ Integrated 2-Bank Memory & External EEPROM datasheet (Rev. A) | 12/07/2011 | ||
| Nota sobre la aplicación | Driving Capacitive Loads with Gamma Buffers | 20/11/2012 |
Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.
The BUF12840EVM is a platform for evaluating the performance of the BUF12840 under various signal, reference, and supply conditions.
| Encapsulado | Pines | Símbolos CAD, huellas y modelos 3D |
|---|---|---|
| VQFN (RGE) | 24 | Ultra Librarian |
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