ISO5851-Q1

Name: ISO5851-Q1
Brand: TI
SKU: ISO5851-Q1
Price: 2.617 USD

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Controlador automotriz de puerta aislada monocanal de 5.7 kVrms, 2.5 A/5 A con funciones de protecci

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document-pdfAcrobat ISO5851-Q1 High-CMTI 2.5-A and 5-A Isolated IGBT, MOSFET Gate Driver With Active Protection Features datasheet (Rev. A) (Inglés) PDF | HTML

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ISO5851-Q1

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Detalles del producto

Number of channels

1

Isolation rating

Reinforced

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

2121

Transient isolation voltage (VIOTM) (VPK)

8000

Power switch

IGBT, MOSFET

Peak output current (A)

5

Features

Active miller clamp, Fault reporting, Power good, Short circuit protection

Output VCC/VDD (max) (V)

30

Output VCC/VDD (min) (V)

15

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.076

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Bootstrap supply voltage (max) (V)

2121

Rise time (ns)

20

Fall time (ns)

20

Undervoltage lockout (typ) (V)

12

Number of channels

1

Isolation rating

Reinforced

Withstand isolation voltage (VISO) (Vrms)

5700

Working isolation voltage (VIOWM) (Vrms)

2121

Transient isolation voltage (VIOTM) (VPK)

8000

Power switch

IGBT, MOSFET

Peak output current (A)

5

Features

Active miller clamp, Fault reporting, Power good, Short circuit protection

Output VCC/VDD (max) (V)

30

Output VCC/VDD (min) (V)

15

Input supply voltage (min) (V)

3

Input supply voltage (max) (V)

5.5

Propagation delay time (µs)

0.076

Input threshold

CMOS

Operating temperature range (°C)

-40 to 125

Rating

Automotive

Bootstrap supply voltage (max) (V)

2121

Rise time (ns)

20

Fall time (ns)

20

Undervoltage lockout (typ) (V)

12

SOIC (DW)

16

106.09 mm² 10.3 x 10.3

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM Classification Level 3A
- Device CDM Classification Level C6
100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at V_CM = 1500 V
2.5-A Peak Source and 5-A Peak Sink Currents
Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
2-A Active Miller Clamp
Output Short-Circuit Clamp
Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
3-V to 5.5-V Input Supply Voltage
15-V to 30-V Output Driver Supply Voltage
CMOS Compatible Inputs
Rejects Input Pulses and Noise Transients Shorter Than 20 ns
Isolation Surge Withstand Voltage 12800-V_PK
Safety-Related Certifications:
- 8000-V_PK V_IOTM and 2121-V_PK V_IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- 5700-V_RMS Isolation for 1 Minute per UL 1577
- CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
- TUV Certification per EN 61010-1 and EN 60950-1
- GB4943.1-2011 CQC Certification
- All Certifications Complete

All trademarks are the property of their respective owners.

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range
- Device HBM Classification Level 3A
- Device CDM Classification Level C6
100-kV/μs Minimum Common-Mode Transient Immunity (CMTI) at V_CM = 1500 V
2.5-A Peak Source and 5-A Peak Sink Currents
Short Propagation Delay: 76 ns (Typ),
110 ns (Max)
2-A Active Miller Clamp
Output Short-Circuit Clamp
Fault Alarm upon Desaturation Detection is Signaled on FLT and Reset Through RST
Input and Output Undervoltage Lockout (UVLO) with Ready (RDY) Pin Indication
Active Output Pull-down and Default Low Outputs with Low Supply or Floating Inputs
3-V to 5.5-V Input Supply Voltage
15-V to 30-V Output Driver Supply Voltage
CMOS Compatible Inputs
Rejects Input Pulses and Noise Transients Shorter Than 20 ns
Isolation Surge Withstand Voltage 12800-V_PK
Safety-Related Certifications:
- 8000-V_PK V_IOTM and 2121-V_PK V_IORM Reinforced Isolation per DIN V VDE V 0884-10 (VDE V 0884-10):2006-12
- 5700-V_RMS Isolation for 1 Minute per UL 1577
- CSA Component Acceptance Notice 5A, IEC 60950–1 and IEC 60601–1 End Equipment Standards
- TUV Certification per EN 61010-1 and EN 60950-1
- GB4943.1-2011 CQC Certification
- All Certifications Complete

All trademarks are the property of their respective owners.

The ISO5851-Q1 is a 5.7-kV_RMS, reinforced isolated gate driver for IGBTs and MOSFETs with 2.5-A source and 5-A sink current. The input side operates from a single 3-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns assures accurate control of the output stage.

An internal desaturation (DESAT) fault detection recognizes when the IGBT is in an overload condition. Upon a DESAT detect, the gate driver output is driven low to V_EE2 potential, turning the IGBT immediately off.

When desaturation is active, a fault signal is sent across the isolation barrier, pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V_EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

When desaturation is active, a fault signal is sent across the isolation barrier pulling the FLT output at the input side low and blocking the isolator input. The FLT output condition is latched and can be reset through a low-active pulse at the RST input.

When the IGBT is turned off during normal operation with bipolar output supply, the output is hard clamp to V_EE2. If the output supply is unipolar, an active Miller clamp can be used, allowing Miller current to sink across a low impedance path preventing IGBT to be dynamically turned on during high voltage transient conditions.

The readiness for the gate driver to be operated is under the control of two undervoltage-lockout circuits monitoring the input side and output side supplies. If either side has insufficient supply the RDY output goes low; otherwise, this output is high.

The ISO5851-Q1 is available in a 16-pin SOIC package. Device operation is specified over a temperature range from –40°C to +125°C ambient.

For all available packages, see the orderable addendum at the end of the datasheet.