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Amplificadores de RF
Amplificadores totalmente diferenciales (FDA) de RF

LMH5401-SP

ACTIVO

Amplificador completamente diferencial de 6.5 GHz y banda ultra ancha con dureza de radiación garant

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LMH5401-SP

ACTIVO
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Detalles del producto

Type Active Balun, RF FDA Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 12.5 OIP3 (typ) (dBm) 37.5 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 1 3rd harmonic (dBc) -70 OIP2 (typ) (dBm) 54 2nd harmonic (dBc) -58 Supply voltage (V) 5 Current consumption (mA) 60 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 85 Radiation, TID (typ) (rad) 100000
Type Active Balun, RF FDA Frequency (min) (MHz) 0 Frequency (max) (MHz) 6500 Gain (typ) (dB) 12 Noise figure (typ) (dB) 12.5 OIP3 (typ) (dBm) 37.5 P1dB (typ) (dBm) 12 Frequency of harmonic distortion measurement (GHz) 1 3rd harmonic (dBc) -70 OIP2 (typ) (dBm) 54 2nd harmonic (dBc) -58 Supply voltage (V) 5 Current consumption (mA) 60 Number of channels 1 Operating temperature range (°C) -55 to 125 Rating Space Output enable Yes Radiation, SEL (MeV·cm2/mg) 85 Radiation, TID (typ) (rad) 100000
LCCC-FC (FFK) 14 33 mm² 6 x 5.5
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.
  • QMLV (QML class V) MIL-PRF-38535 qualified, SMD 5962R1721401VXC
    • Radiation hardness assurance (RHA) up to 100-krad(Si) total ionizing dose (TID)
    • Single event latch-up (SEL) immune to
      LET = 85 MeV-cm2/mg
    • Qualified over the military temperature range (–55°C to 125°C)
  • Gain bandwidth product (GBP): 6.5 GHz
  • Excellent linearity performance:
    DC to 2 GHz
  • Slew rate: 17,500 V/µs
  • Low HD2, HD3 distortion
    (500 mVPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 100 MHz: HD2 at –91 dBc, HD3 at –95 dBc
    • 200 MHz: HD2 at –86 dBc, HD3 at –85 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –80 dBc
    • 1 GHz: HD2 at –53 dBc, HD3 at –70 dBc
    • 2 GHz: HD2 at –68 dBc, HD3 at –56 dBc
  • Low IMD2, IMD3 distortion
    (1 VPP, 100 Ω, SE-DE, Gv = 17 dB)(1):
    • 500 MHz: IMD2 at –90 dBc, IMD3 at –79 dBc
    • 1 GHz: IMD2 at –80 dBc, IMD3 at –61 dBc
    • 2 GHz: IMD2 at –64 dBc, IMD3 at –42 dBc
  • High OIP2, OIP3. Gp = 8 dB(1)
    • 500 MHz: OIP2 at 91 dBm, OIP3 at 47.7 dBm
    • 1 GHz: OIP2 at 80 dBm, OIP3 at 37.5 dBm
  • Input voltage noise: 1.25 nV/√Hz
  • Input current noise: 3.5 pA/√Hz
  • Supports single- and dual-supply operation
  • Current consumption: 60 mA
  • Power-down feature (1)

(1)Power Gain (Gp) = 8 dB; Voltage Gain (Gv) = 17 dB; RLtotal = 200 Ω. See Output Reference Nodes and Gain Nomenclature section for more details.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.

The LMH5401-SP is a very high-performance, radiation hardened, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401-SP generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.



The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from dc to 2 GHz. The LMH5401-SP can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.

A common-mode reference input pin is provided to align the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.

This level of performance is achieved at a very low power level of 300 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, LCCC-14 package for higher performance.
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Documentación técnica

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Tipo Título Fecha
* Data sheet LMH5401-SP radiation hardened 6.5-GHz, low-noise, low-power, gain-configurable fully differential amplifier datasheet (Rev. B) PDF | HTML 28 feb 2019
* Radiation & reliability report Single-Event Effects Test Report of the LMH5401-SP (Rev. B) 26 nov 2018
* Radiation & reliability report LMH5401-SP (5962R1721401VXC) Neutron Displacement Damage Characterization 07 sep 2018
* Radiation & reliability report LMH5401-SP TID Radiation Report (Rev. A) 31 jul 2018
* SMD LMH5401-SP SMD 5962-17214 03 may 2018
Application brief DLA Approved Optimizations for QML Products (Rev. C) PDF | HTML 17 jun 2025
Application note Heavy Ion Orbital Environment Single-Event Effects Estimations (Rev. B) PDF | HTML 10 jun 2025
Selection guide TI Space Products (Rev. K) 04 abr 2025
More literature TI Engineering Evaluation Units vs. MIL-PRF-38535 QML Class V Processing (Rev. B) 20 feb 2025
Application note Single-Event Effects Confidence Interval Calculations (Rev. A) PDF | HTML 19 oct 2022
Application brief Analog Front-End Design With Texas Instruments’ Tooling Landscape PDF | HTML 07 mar 2022
Application note Rad-hardened FDA as Clock Buffer in Communication and Radar Payloads (Rev. A) 02 ago 2019
E-book Radiation Handbook for Electronics (Rev. A) 21 may 2019
User guide TSW12D1620EVM-CVAL User's Guide (Rev. A) 29 ene 2019

Diseño y desarrollo

Para conocer los términos adicionales o los recursos necesarios, haga clic en cualquier título de abajo para ver la página de detalles cuando esté disponible.

Placa de evaluación

LMH5401EVM-CVAL — Módulo de evaluación LMH5401-SP de amplificador completamente diferencial de banda ancha con dureza

El LMH5401EVM-CVAL es un módulo de evaluación para el amplificador único LMH5401FFK/EM en un encapsulado de RF de alto rendimiento LCCC de 14 pines. El módulo de evaluación está diseñado para mostrar rápida y fácilmente la funcionalidad y versatilidad del amplificador.

El EVM está listo para (...)

Guía del usuario: PDF
No disponible en TI.com
Placa de evaluación

TSW12D1620EVM-CVAL — Módulo de evaluación ADC12D1620QML-SP para ADC de 300 krad, 12 bits, doble de 1.6 GSPS o simple de 3

El TSW12D1620EVM-CVAL es un módulo de evaluación (EVM) de receptor de banda ancha de 1.5 GHz, que incluye modelos de ingeniería cerámica de la solución de amplificador, convertidor analógico a digital (ADC), reloj, sensor de temperatura, microcontrolador y fuente de alimentación. La placa es idónea (...)

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Modelo de simulación

LMH5401-SP TINA-TI Reference Design

SBOMAM1.TSC (382 KB) - TINA-TI Reference Design
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Modelo de simulación

LMH5401-SP TINA-TI Spice Model

SBOMAM0.ZIP (10 KB) - TINA-TI Spice Model
Descargar
Diseños de referencia

TIDA-010191 — Diseño de referencia de sincronización de 15 GHz JESD204B multicanal de grado espacial

Las antenas de matriz en fase y la formación de haces digital son tecnologías clave que impulsarán el rendimiento de los futuros sistemas de comunicación por satélite de banda ancha y de imágenes de radar a bordo de vehículos espaciales. La formación de haces digital, a diferencia de la formación (...)
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Encapsulado Pines Símbolos CAD, huellas y modelos 3D
LCCC-FC (FFK) 14 Ultra Librarian
Se aplican los Términos y condiciones estándar de TI para los elementos de evaluación.

Pedidos y calidad

Información incluida:
  • RoHS
  • REACH
  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
Información incluida:
  • Lugar de fabricación
  • Lugar de ensamblaje

Los productos recomendados pueden tener parámetros, módulos de evaluación o diseños de referencia relacionados con este producto de TI.

Soporte y capacitación

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