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SN74HC10-EP

ACTIVO

Compuerta NAND automotriz, 3 canales y 3 entradas de 2 V a 6 V y 5.2 mA de potencia de accionamiento

Detalles del producto

Technology family HC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10-50ns) Data rate (max) (Mbps) 28 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
Technology family HC Number of channels 3 Inputs per channel 3 IOL (max) (mA) 5.2 IOH (max) (mA) -5.2 Input type Standard CMOS Output type Push-Pull Features High speed (tpd 10-50ns) Data rate (max) (Mbps) 28 Rating HiRel Enhanced Product Operating temperature range (°C) -40 to 125
TSSOP (PW) 14 32 mm² (5 mm × 6.4 mm) SOIC (D) 14 51.9 mm² (8.65 mm × 6 mm)
  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Wide Operating Voltage Range of 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Max ICC
  • Typical tpd = 9 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

  • Controlled Baseline
    • One Assembly/Test Site, One Fabrication Site
  • Extended Temperature Performance of –40°C to 125°C
  • Enhanced Diminishing Manufacturing Sources (DMS) Support
  • Enhanced Product-Change Notification
  • Qualification Pedigree
  • Wide Operating Voltage Range of 2 V to 6 V
  • Outputs Can Drive Up To 10 LSTTL Loads
  • Low Power Consumption, 20-µA Max ICC
  • Typical tpd = 9 ns
  • ±4-mA Output Drive at 5 V
  • Low Input Current of 1 µA Max

Component qualification in accordance with JEDEC and industry standards to ensure reliable operation over an extended temperature range. This includes, but is not limited to, Highly Accelerated Stress Test (HAST) or biased 85/85, temperature cycle, autoclave or unbiased HAST, electromigration, bond intermetallic life, and mold compound life. Such qualification testing should not be viewed as justifying use of this component beyond specified performance and environmental limits.

The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A • B • C)\ or Y = A\ + B\ + C\ in positive logic.

The SN74HC10 device contains three independent 3-input NAND gates. It performs the Boolean function Y = (A • B • C)\ or Y = A\ + B\ + C\ in positive logic.

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Documentación principal Tipo Título Opciones de formato Descargar la versión más reciente en inglés Fecha
* Hoja de datos SN74HC10-EP datasheet 6/01/2004
* VID SN74HC10-EP VID V6204688 21/06/2016

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