Inicio Administración de potencia Circuitos integrados de alimentación para memoria DDR

TPS65295

ACTIVO

Solución completa de alimentación de memoria DDR4 con entrada de 4.5 V a 18 V

Detalles del producto

DDR memory type DDR4 Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Converter Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
DDR memory type DDR4 Control mode D-CAP3 Iout VDDQ (max) (A) 8 Iout VTT (max) (A) 1 Iq (typ) (mA) 0.15 Output VDDQ, VREF, VTT Vin (min) (V) 4.5 Vin (max) (V) 18 Features Complete Solution Rating Catalog Operating temperature range (°C) -40 to 125 Regulator type Step-Down Converter Vin bias (max) (V) 16 Vin bias (min) (V) 4.5 Vout VTT (min) (V) 0.6
VQFN-HR (RJE) 18 9 mm² 3 x 3
  • Synchronous buck converter (VDDQ)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.2 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ and 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • Synchronous buck converter (VPP)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 2.5 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ and 120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • 1-A LDO (VTT)
    • 1-A continual sink and source current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-z in S3
    • ±30-mV VTT output accuracy (DC+AC)
  • Buffered reference (VTTREF)
    • Buffered, low noise, ±10-mA capability
    • 0.8% output accuracy
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package
  • Synchronous buck converter (VDDQ)
    • Input voltage range: 4.5 V to 18 V
    • Output voltage fixed at 1.2 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 8 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 22-mΩ and 8.6-mΩ RDS(on) internal power switch
    • 600-kHz switching frequency
    • Internal soft start: 1.6 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • Synchronous buck converter (VPP)
    • Input voltage range: 3 V to 5.5 V
    • Output voltage fixed at 2.5 V
    • D-CAP3™ mode control for fast transient response
    • Continual output current: 1 A
    • Advanced Eco-mode™ pulse skip
    • Integrated 150-mΩ and 120-mΩ RDS(on) internal power switch
    • 580-kHz switching frequency
    • Internal soft start: 1 ms
    • Cycle-by-cycle overcurrent protection
    • Latched output OV and UV protections
  • 1-A LDO (VTT)
    • 1-A continual sink and source current
    • Requires only 10 µF of ceramic output capacitor
    • Support high-z in S3
    • ±30-mV VTT output accuracy (DC+AC)
  • Buffered reference (VTTREF)
    • Buffered, low noise, ±10-mA capability
    • 0.8% output accuracy
  • Low quiescent current: 150 µA
  • Power good indicator
  • Output discharge function
  • Power up and power down sequencing control
  • Non-latch for OT and UVLO protections
  • 18-pin 3.0-mm × 3.0-mm HotRod™ VQFN package

The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.

The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor.

The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

The TPS65295 device provides a complete power solution for DDR4 memory system with the lowest total cost and minimum space. It meets the JEDEC standard for DDR4 power-up and power-down sequence requirement. The TPS65295 integrates two synchronous buck converters (VPP and VDDQ) and a 1-A sink and source tracking LDO (VTT) and a buffered low noise reference (VTTREF). The TPS65295 employs D-CAP3™ mode coupled with 600-kHz switching frequency for ease-of-use, fast transient, and support for ceramic output capacitors without an external compensation circuit.

The VTTREF tracks ½ VDDQ within excellent 0.8% accuracy. The VTT, which provides both 1-A sink and source continual current capabilities, requires only 10-µF of ceramic output capacitor.

The TPS65295 provides rich functions as well as excellent power supply performance. It supports flexible power state control, placing VTT at high-Z in S3 and discharging VDDQ, VTT, and VTTREF in S4/S5 state. OVP, UVP, OCP, UVLO and thermal shutdown protections are also available. The part is available in a thermally enhanced 18-pin HotRod™ VQFN package and is designed to operate under the –40°C to 125°C junction temperature range.

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Documentación técnica

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Tipo Título Fecha
* Data sheet TPS65295 complete DDR4 memory power solution datasheet PDF | HTML 22 feb 2019
Application note Non-Isolated Point-of-Load Solutions for Tiger Lake in PC Applications (Rev. B) PDF | HTML 29 abr 2021

Diseño y desarrollo

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Placa de evaluación

TPS65295EVM-079 — Módulo de evaluación de convertidor buck 8 A

El módulo de evaluación TPS65295 (EMV) se utiliza para evaluar el dispositivo TPS65295. El dispositivo TPS65295 proporciona una solución de potencia completa para el sistema de memoria DDR4 con el menor costo total y el espacio mínimo. Cumple con el estándar JEDEC para el requisito de secuencia de (...)
Guía del usuario: PDF
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Pedidos y calidad

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  • RoHS
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  • Marcado del dispositivo
  • Acabado de plomo/material de la bola
  • Clasificación de nivel de sensibilidad a la humedad (MSL) / reflujo máximo
  • Estimaciones de tiempo medio entre fallas (MTBF)/fallas en el tiempo (FIT)
  • Contenido del material
  • Resumen de calificaciones
  • Monitoreo continuo de confiabilidad
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  • Lugar de fabricación
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