전원 관리 전원 스위치 이상적인 다이오드/오링 컨트롤러

LM74700D-Q1

활성

오토모티브 3.2V~70V, 80uA 리버스 배터리 보호 이상적 다이오드 컨트롤러

제품 상세 정보

Vin (min) (V) 3.2 Vin (max) (V) 70 Number of channels 1 Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 FET External single FET IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.37 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Design support EVM, Simulation Model Rating Automotive Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
Vin (min) (V) 3.2 Vin (max) (V) 70 Number of channels 1 Features Automotive load dump compatibility, Enable, Linear control, Reverse current blocking, Reverse polarity protection Iq (typ) (mA) 0.08 Iq (max) (mA) 0.13 FET External single FET IGate source (typ) (µA) 11000 IGate sink (typ) (mA) 2370 IGate pulsed (typ) (A) 2.37 Operating temperature range (°C) -40 to 125 VSense reverse (typ) (mV) -11 Design support EVM, Simulation Model Rating Automotive Shutdown current (ISD) (mA) (A) 0.001 Device type Ideal diode controller Product type Ideal diode controller
SOIC (D) 8 29.4 mm² 4.9 x 6
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V start-up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turn-off current
  • < 0.75-µs response to reverse current blocking
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in an 8-pin SOIC package
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3.2-V to 65-V input range (3.9-V start-up)
  • –65-V reverse voltage rating
  • Charge pump for external N-Channel MOSFET
  • 20-mV ANODE to CATHODE forward voltage drop regulation
  • Enable pin feature
  • 1-µA shutdown current (EN=Low)
  • 80-µA operating quiescent current (EN=High)
  • 2.3-A peak gate turn-off current
  • < 0.75-µs response to reverse current blocking
  • Meets automotive ISO7637 transient requirements with a suitable TVS Diode
  • Available in an 8-pin SOIC package

The LM74700D-Q1 is an automotive AEC Q100 qualified ideal diode controller, which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V, and 48-V automotive battery systems. The 3.2-V input voltage support is particularly well designed for severe cold crank requirements in automotive systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and makes sure of zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device designed for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions.

The LM74700D-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700D-Q1 helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current.

The LM74700D-Q1 is an automotive AEC Q100 qualified ideal diode controller, which operates in conjunction with an external N-channel MOSFET as an ideal diode rectifier for low loss reverse polarity protection with a 20-mV forward voltage drop. The wide supply input range of 3.2 V to 65 V allows control of many popular DC bus voltages such as 12-V, 24-V, and 48-V automotive battery systems. The 3.2-V input voltage support is particularly well designed for severe cold crank requirements in automotive systems. The device can withstand and protect the loads from negative supply voltages down to –65 V.

The device controls the GATE of the MOSFET to regulate the forward voltage drop at 20 mV. The regulation scheme enables graceful turn-off of the MOSFET during a reverse current event and makes sure of zero DC reverse current flow. Fast response (< 0.75 µs) to reverse current blocking makes the device designed for systems with output voltage holdup requirements during ISO7637 pulse testing as well as power fail and input micro-short conditions.

The LM74700D-Q1 controller provides a charge pump gate drive for an external N-channel MOSFET. The high voltage rating of LM74700D-Q1 helps to simplify the system designs for automotive ISO7637 protection. With the enable pin low, the controller is off and draws approximately 1 µA of current.

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기술 문서

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모두 보기1
유형 직함 날짜
* Data sheet LM74700D-Q1 Automotive Low IQ Reverse Battery Protection Ideal Diode Controller datasheet PDF | HTML 2022/05/12

설계 및 개발

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평가 보드

LM74700DDFEVM — LM74700-Q1 3.2V~65V, 80μA IQ 오토모티브 이상적 다이오드 컨트롤러(DRF 패키지) 평가 모듈

The LM74700DDFEVM helps designers evaluate the operation and performance of the LM74700-Q1 3.2-V to 65-V, 80-μA IQ automotive ideal diode controller (DDF package). This evaluation module demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low IQ and (...)

사용 설명서: PDF | HTML
TI.com에서 구매할 수 없습니다
평가 보드

LM74700EVM — LM74700 평가 모듈

The LM74700EVM helps designers evaluate the operation and performance of the LM74700-Q1 smart diode controller. This evaluation module demonstrates how an N-channel power MOSFET can emulate a very-low forward voltage diode with low IQ and low-leakage current flowing through the IC.
사용 설명서: PDF
TI.com에서 구매할 수 없습니다
시뮬레이션 툴

PSPICE-FOR-TI — TI 설계 및 시뮬레이션 툴용 PSpice®

TI용 PSpice®는 아날로그 회로의 기능을 평가하는 데 사용되는 설계 및 시뮬레이션 환경입니다. 완전한 기능을 갖춘 이 설계 및 시뮬레이션 제품군은 Cadence®의 아날로그 분석 엔진을 사용합니다. 무료로 제공되는 TI용 PSpice에는 아날로그 및 전력 포트폴리오뿐 아니라 아날로그 행동 모델에 이르기까지 업계에서 가장 방대한 모델 라이브러리 중 하나가 포함되어 있습니다.

TI 설계 및 시뮬레이션 환경용 PSpice는 기본 제공 라이브러리를 이용해 복잡한 혼합 신호 설계를 시뮬레이션할 수 있습니다. 레이아웃 및 제작에 (...)
패키지 다운로드
SOIC (D) 8 옵션 보기

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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