SN74CB3Q3306A
- High-Bandwidth Data Path (up to 500 MHz(1))
- 5-V-Tolerant I/Os With Device Powered Up or Powered Down
- Low and Flat ON-State Resistance (ron) Characteristics Over
Operating Range (ron = 4 Ω Typ) - Rail-to-Rail Switching on Data I/O Ports
- 0- to 5-V Switching With 3.3-V VCC
- 0- to 3.3-V Switching With 2.5-V VCC
- Bidirectional Data Flow With Near-Zero Propagation Delay
- Low Input/Output Capacitance Minimizes Loading and Signal Distortion
(Cio(OFF) = 3.5 pF Typ) - Fast Switching Frequency (f OE = 20 MHz Max)
- Data and Control Inputs Provide Undershoot Clamp Diodes
- Low Power Consumption (ICC = 0.25 mA Typ)
- VCC Operating Range From 2.3 V to 3.6 V
- Data I/Os Support 0- to 5-V Signaling Levels
(0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V) - Control Inputs Can Be Driven by TTL or 5-V/3.3-V CMOS Outputs
- Ioff Supports Partial-Power-Down Mode Operation
- Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
- ESD Performance Tested Per JESD 22
- 2000-V Human-Body Model (A114-B, Class II)
- 1000-V Charged-Device Model (C101)
- Supports Both Digital and Analog Applications: USB Interface, Differential Signal
Interface, Bus Isolation, Low-Distortion Signal Gating
(1) For additional information regarding the performance characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, literature number SCDA008.
The SN74CB3Q3306A is a high-bandwidth FET bus switch utilizing a charge pump to elevate the gate voltage of the pass transistor, providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus. Specifically designed to support high-bandwidth applications, the SN74CB3Q3306A provides an optimized interface solution ideally suited for broadband communications, networking, and data-intensive computing systems.
The SN74CB3Q3306A is organized as two 1-bit switches with separate output-enable (1OE, 2OE) inputs. It can be used as two 1-bit bus switches or as one 2-bit bus switch. When OE is low, the associated 1-bit bus switch is ON and the A port is connected to the B port, allowing bidirectional data flow between ports. When OE is high, the associated 1-bit bus switch is OFF, and a high-impedance state exists between the A and B ports.
This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry prevents damaging current backflow through the device when it is powered down. The device has isolation during power off.
To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.
기술 문서
| 유형 | 직함 | 날짜 | ||
|---|---|---|---|---|
| * | Data sheet | SN74CB3Q3306A datasheet (Rev. E) | 2011/01/25 | |
| Application note | Selecting the Correct Texas Instruments Signal Switch (Rev. E) | PDF | HTML | 2022/06/02 | |
| Application note | Multiplexers and Signal Switches Glossary (Rev. B) | PDF | HTML | 2021/12/01 | |
| Application note | CBT-C, CB3T, and CB3Q Signal-Switch Families (Rev. C) | PDF | HTML | 2021/11/19 | |
| Application brief | Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) | PDF | HTML | 2021/01/06 | |
| Selection guide | Logic Guide (Rev. AB) | 2017/06/12 | ||
| Application note | Understanding and Interpreting Standard-Logic Data Sheets (Rev. C) | 2015/12/02 | ||
| User guide | LOGIC Pocket Data Book (Rev. B) | 2007/01/16 | ||
| More literature | Digital Bus Switch Selection Guide (Rev. A) | 2004/11/10 | ||
| Application note | Semiconductor Packing Material Electrostatic Discharge (ESD) Protection | 2004/07/08 | ||
| User guide | Signal Switch Data Book (Rev. A) | 2003/11/14 | ||
| Application note | Bus FET Switch Solutions for Live Insertion Applications | 2003/02/07 |
설계 및 개발
추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.
DIP-ADAPTER-EVM — DIP 어댑터 평가 모듈
소형 표면 실장 IC(집적 회로)와 쉽고 빠르며 경제적인 방식으로 인터페이싱하는 방법을 제공하는 DIP 어댑터 평가 모듈(DIP-ADAPTER-EVM)로 연산 증폭기 프로토타이핑 및 테스트 속도를 높이세요. 제품에 포함된 Samtec 터미널 스트립을 사용하여 지원되는 연산 증폭기를 연결하거나 기존 회로에 직접 연결할 수 있습니다.
DIP 어댑터 EVM 키트는 다음을 포함해 가장 널리 사용되는 6개의 업계 표준 패키지를 지원합니다.
- D 및 U(SOIC-8)
- PW(TSSOP-8)
- DGK(MSOP-8, VSSOP-8)
- (...)
LEADED-ADAPTER1 — TI의 5, 8, 10, 16 및 24핀 리드 패키지의 빠른 테스트를 위한 DIP 헤더 어댑터에 대한 표면 실장
The EVM-LEADED1 board allows for quick testing and bread boarding of TI's common leaded packages. The board has footprints to convert TI's D, DBQ, DCT,DCU, DDF, DGS, DGV, and PW surface mount packages to 100mil DIP headers.
TIDEP0054 — 변전소 자동화를 위한 병렬 중복 프로토콜(PRP) 이더넷 레퍼런스 설계
| 패키지 | 핀 | 다운로드 |
|---|---|---|
| TSSOP (PW) | 8 | 옵션 보기 |
| VSSOP (DCU) | 8 | 옵션 보기 |
주문 및 품질
- RoHS
- REACH
- 디바이스 마킹
- 납 마감/볼 재질
- MSL 등급/피크 리플로우
- MTBF/FIT 예측
- 물질 성분
- 인증 요약
- 지속적인 신뢰성 모니터링
- 팹 위치
- 조립 위치
권장 제품에는 본 TI 제품과 관련된 매개 변수, 평가 모듈 또는 레퍼런스 디자인이 있을 수 있습니다.