패키징 정보
| 패키지 | 핀 SOIC (D) | 8 |
| 작동 온도 범위(°C) -40 to 105 |
| 패키지 수량 | 캐리어 2,500 | LARGE T&R |
TPS28225-Q1의 주요 특징
- Qualified for automotive applications
- Drives two N-channel MOSFETs with 14-ns adaptive dead time
- Wide gate drive voltage: 4.5 V up to 8.8 V with best efficiency at 7 V to 8 V
- Wide power system train input voltage: 3 V up to 27 V
- Wide input PWM signals: 2-V up to 13.2-V amplitude
- Capable of driving MOSFETs with ≥40-A current per phase
- High frequency operation: 14-ns propagation delay and 10-ns rise or fall time allows FSW up to 2 MHz
- Capable of propagating <30-ns input PWM pulses
- Low-side driver sink on-resistance (0.4 Ω) prevents dV/dT related shoot-through current
- Three-state PWM input for power stage shutdown
- Space saving enable (input) and power good (output) signals on the same pin
- Thermal shutdown
- UVLO protection
- Internal bootstrap diode
- Economical SOIC-8 and thermally enhanced 3-mm × 3-mm VSON-8 packages
- High performance replacement for popular three-state input drivers
TPS28225-Q1에 대한 설명
The TPS28225-Q1 is a high-speed driver for N-channel complementary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current, single and multi-phase DC-to-DC converters. The TPS28225-Q1 is highly efficient, has a small solution size and low-EMI emissions.
The TPS28225-Q1 device offers high performance features such as a 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capabilities. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor is charged by an internal diode which allows the use of an N-channel MOSFETs in a half-bridge configuration.
The TPS28225-Q1 is offered in an economical SOIC-8 package and in a thermally enhanced small sized VSON package. The driver is specified to operate in the temperature range of –40°C to 105°C with the absolute maximum junction temperature of 150°C.