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DRV7163

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100V 35A 半橋 GaN 馬達驅動器功率級

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DRV7163

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產品規格表 立即訂購

產品詳細資料

Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 50 RDS(ON) (HS + LS) (Ω) 0.045 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
Rating Catalog Architecture Half-bridge, Integrated FET Peak output current (A) 50 RDS(ON) (HS + LS) (Ω) 0.045 VDS (max) (V) 120 Features Integrated GaN FET Operating temperature range (°C) -40 to 175
UNKNOWN (RAR) 17 See data sheet
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 4.4 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 35Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.
  • 100V, Half-bridge GaN Motor Driver power stage with integrated driver supporting 48V systems
  • Low GaN on-state resistance
    • 4.4 mΩ RDS(ON) (per FET) at TA=25°C
  • Enables efficient and high density power conversion
    • High output current capability: 35Arms
    • Supports upto 500 kHz PWM switching frequency
    • Ultra-low propagation delay (20ns typical) and matching (2ns typical)
    • Configurable slew rate of GaN FETs
    • Zero-voltage detection (ZVD) reporting for dead-time optimization.
    • Independent input mode (IIM) control
    • Single PWM input with resistor programmable dead-time option for IO-limited controllers
  • 5V external bias power supply
    • Supports 3.3V and 5V input logic levels
  • Robust protection
    • Interlock protection in Independent Input Mode (IIM)
    • Internal bootstrap supply voltage regulation to prevent GaN FET Overdrive
    • VDS monitoring based cycle-by-cyle short-circuit protection
    • Fault indication for over-temperature, supply under-voltage and short-circuit events
  • Parasitic optimized QFN package with exposed top pad to support top-side cooling.

The DRV7163A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.

The DRV7163A device is a family of 100V half-bridge power stages, with integrated gate-driver and enhancement-mode gallium nitride (GaN) FETs. The devices consist of a high-frequency GaN FET driver in a half-bridge configuration, that drives two 100V GaN FETs.

GaN FETs provide significant advantages for power conversion as GaN FETs have zero reverse recovery and very small input capacitance (CISS) and output capacitance (COSS). All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements, which can be easily mounted on PCBs.

The TTL logic compatible inputs support 3.3V and 5V logic levels, regardless of the GVDD voltage. A proprietary bootstrap voltage control technique regulates the gate voltages of the enhancement mode GaN FETs within the safe operating range. The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. The device is an excellent option for applications requiring high-frequency, high-efficiency operation in a small form factor.
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* Data sheet DRV7163A 100V GaN Half-Bridge Power Stage datasheet PDF | HTML 2026年 7月 24日

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開發板

DRV8376EVM — DRV8376 評估模組

DRV8376EVM 是適用於三相馬達驅動器應用的整合式驅動器 IC 評估模組，可為驅動 4.5V 至 65V 無刷 DC 馬達的客戶提供單晶片功率級設計。除了 DRV8376 的硬體外，TMS320F280049C 微控制器架構電路板也具有參考軟體，會將必要的訊號傳送至 DRV8376 以轉動三相位無刷 DC 馬達。GUI Composer 軟體可讓使用者對設定進行編程、讓馬達旋轉，並監控系統是否有故障狀況。
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UNKNOWN (RAR) 17 Ultra Librarian
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