LMG1025-Q1
- AEC-Q100 grade 1 qualified
- 1.25-ns typical minimum input pulse width
- 2.6-ns typical rising propagation delay
- 2.9-ns typical falling propagation delay
- 300-ps typical pulse distortion
- Independent 7-A pull-up and 5-A pull-down current
- 650-ps typical rise time (220-pF load)
- 850-ps typical fall time (220-pF load)
- 2-mm x 2-mm QFN package
- Inverting and non-inverting inputs
- UVLO and over-temperature protection
- Single 5-V supply voltage
The LMG1025-Q1 is a single channel low-side enhancement-mode GaN FET and logic-level MOSFET driver for high switching frequency automotive applications. Narrow pulse width capability, fast switching specification, and small pulse distortion combine to significantly enhance LiDAR, ToF, and Power Converter performance. 1.25-ns output pulse width enables more powerful, eye-safe diode pulses. This, combined with 300-ns distortion, leads to longer-range, precise LiDAR/ToF systems. 2.9-ns propagation delay significantly improves the control loop response time and thus overall performance of the power converters. Split output allows the drive strength and timing to be independently adjusted through external resistors between OUTH, OUTL, and the FET gate.
The driver features undervoltage lockout (UVLO) and over-temperature protection (OTP) to ensure the device is not damaged in overload or fault conditions. LMG1025-Q1 is available in a compact, leadless, AEC-Q100 automotive qualified package to meet the size and gate loop inductance requirements of high switching frequency automotive applications.
技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | LMG1025-Q1 Automotive Low Side GaN and MOSFET Driver For High Frequency and Narrow Pulse Applications datasheet (Rev. B) | PDF | HTML | 2020年 1月 16日 |
Application brief | GaN Applications | PDF | HTML | 2022年 8月 10日 | |
Application brief | Key Parameters and Driving Requirements of GaN FETs | PDF | HTML | 2022年 8月 4日 | |
Application brief | Nomenclature, Types, and Structure of GaN Transistors | PDF | HTML | 2022年 8月 4日 | |
Application brief | How GaN Enables More Efficient and Reduced Form Factor Power Supplies | PDF | HTML | 2022年 8月 2日 | |
Functional safety information | LMG1025-Q1 FIT, FMD, and Pin FMA | PDF | HTML | 2022年 6月 24日 | |
Certificate | LMG1025-Q1EVM EU Declaration of Conformity (DoC) (Rev. A) | 2020年 9月 16日 | ||
EVM User's guide | LMG1025-Q1 EVM User's Guide (Rev. B) | 2020年 5月 8日 | ||
Application brief | External Gate Resistor Selection Guide (Rev. A) | 2020年 2月 28日 | ||
Application brief | Understanding Peak IOH and IOL Currents (Rev. A) | 2020年 2月 28日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
LMG1020EVM-006 — LMG1020 GaN 低壓側驅動器 + GaN FET 光達評估模組
LMG1025-Q1EVM — LMG1025-Q1 GaN 低側驅動器和 GaN FET LiDAR 評估模組
PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具
TIDA-01573 — 適用於 LiDAR 的納秒雷射驅動器參考設計
封裝 | 引腳 | 下載 |
---|---|---|
WSON (DEE) | 6 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點
建議產品可能具有與此 TI 產品相關的參數、評估模組或參考設計。