LMH5485-SEP
- Radiation tolerant
- TID assured for every wafer lot up to 30 krad (Si)
- Single event latch-up (SEL) immune to LET = 43 MeV-cm2 /mg
- Qualified over the military temperature range: .. –55°C to 125°C
- Gain bandwidth product (GBWP): 850 MHz
- Slew rate: 1300 V/µs
- HD2, HD3: –118 dBc, –147 dBc (100 kHz, 2 VPP)
- Input voltage noise: 2.4 nV/√Hz
- Low offset drift: ±0.5 µV/°C (typical)
- Negative rail input (NRI), rail-to-rail output (RRO)
- Power supply:
- Supply voltage range: 2.7 V to 5.4 V
- Quiescent current: 10.1 mA
- Power-down capability: 2 µA (typical)
The LMH5485-SEP is a radiation tolerant, low-power, voltage-feedback, fully differential amplifier (FDA). This part is able to achieve a high gain bandwidth product (GBWP) of 850-MHz, allowing it to maintain excellent distortion performance over a wide range of frequencies as shown in the following figure. This wide bandwidth range is also achieved with a relatively low power consumption of 10.1-mA and broadband voltage noise of 2.4nV/√Hz. This combination of power consumption, bandwidth and noise allows the LMH5485-SEP to be well suited for power sensitive data acquisition systems with frequencies >10 MHz that require both the best signal-to-noise ratio (SNR) and spurious-free dynamic range (SFDR).
The LMH5485-SEP features the negative-rail input required when interfacing with a DC-coupled, ground-centered, source signal. This negative-rail input, with a rail-to-rail output, allows for easy interface between single-ended, ground-referenced, bipolar signal sources and a wide variety of successive approximation register (SAR), delta-sigma (ΔΣ), or pipeline ADCs using only a single 2.7 V to 5.4 V power supply. This device also features a low offset voltage drift of ±0.5 µV/°C, allowing it to maintain excellent DC performance over it’s wide temperature range of –55°C to +125°C.
技術文件
| 重要文件 | 類型 | 標題 | 格式選項 | 下載最新的英文版本 | 日期 | |
|---|---|---|---|---|---|---|
| * | 資料表 | LMH5485-SEP Radiation Tolerant, Negative Rail Input, Rail-to-Rail Output, Precision, 850 MHz Fully Differential Amplifier datasheet (Rev. A) | PDF | HTML | 2022/11/22 | ||
| * | 輻射及可靠性報告 | LMH5485-SEP Production Flow and Reliability Report | PDF | HTML | 2022/12/12 | ||
| 技術文章 | 航太級強化產品如何因應低地球軌道應用的挑戰 (Rev. A) | PDF | HTML | Download English Version (Rev.A) | PDF | HTML | 2024/1/11 | |
| Circuit design | Space-Grade, SE-to-Diff ADC Driver Circuit Using a Fully-Differential Amplifier | PDF | HTML | 2023/6/15 | |||
| Application brief | Analog Front-End Design With Texas Instruments’ Tooling Landscape | PDF | HTML | 2022/3/7 |
設計與開發
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DEM-FDA-DGK-EVM — 採用 DGK (HVSSOP) 封裝且適用於全差分放大器的未組裝評估模組
DEM-FDA-DGN-EVM — 採用 DGN 封裝且適用於全差分放大器的評估模組
DEM-FDA-DGN-EVM 是採用 DGN (HVSSOP) 封裝之全差動放大器 (FDA) 的空板評估模組 (EVM)。該 EVM 設計旨在使用 50-Ω SMA 連接器與實驗室設備搭配使用，對高速 FDA 進行快速高效的實驗室測試。電路圖會考量所有必要的連接器以執行實驗室量測，包括電源和訊號連線。EVM 在依照電路圖組裝時會針對單端輸入及單端輸出進行配置，而且 EVM 會調適全差動行為及適當配置。輸出變壓器可實現單端輸出以輕鬆介接測試設備，並且具備外部 SMA 連接器以供輸出共模 (Vocm) 及切斷電源 (PD) 控制使用。
DEM-FDA-SOIC-EVM — 適用於採用 SOIC 封裝之全差分放大器的評估模組
DEM-FDA-SOIC-EVM 是採用 D (SOIC) 封裝之全差動放大器 (FDA) 的空板評估模組 (EVM)。該 EVM 設計旨在使用 50-Ω SMA 連接器與實驗室設備搭配使用，對高速 FDA 進行快速高效的實驗室測試。電路圖會考量所有必要的連接器以執行實驗室量測，包括電源和訊號連線。EVM 在依照電路圖組裝時會針對單端輸入及單端輸出進行配置，而且 EVM 會調適全差動行為及適當配置。輸出變壓器可實現單端輸出以輕鬆介接測試設備，並且具備外部 SMA 連接器以供輸出共模 (Vocm) 及切斷電源 (PD) 控制使用。
| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VSSOP (DGK) | 8 | Ultra Librarian |